TIC253N-S

TIC253N-S Datasheet


TIC253 SERIES SILICON TRIACS

Part Datasheet
TIC253N-S TIC253N-S TIC253N-S (pdf)
Related Parts Information
TIC253D-S TIC253D-S TIC253D-S
TIC253M-S TIC253M-S TIC253M-S
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TIC253 SERIES SILICON TRIACS
● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGT of 50 mA Quadrants 1 - 3

SOT-93 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDC2ADA
absolute maximum ratings over operating case temperature unless otherwise noted

RATING

VALUE

UNIT

OBSOLETE TIC253D

Repetitive peak off-state voltage see Note 1

TIC253M TIC253S

TIC253N

Full-cycle RMS on-state current at or below 70°C case temperature see Note 2

Peak on-state surge current full-sine-wave at or below 25°C case temperature see Note 3

Peak gate current

Operating case temperature range

Storage temperature range

Lead temperature mm from case for 10 seconds

VDRM

IT RMS ITSM IGM TC Tstg TL
600 V
-40 to +110
-40 to +125
electrical characteristics at 25°C case temperature unless otherwise noted

IDRM

PARAMETER Repetitive peak off-state current

Gate trigger
current

Gate trigger
voltage

On-state voltage

VD = Rated VDRM

Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† IT = A

TEST CONDITIONS

IG = 0

RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 IG = 50 mA

TC = 110°C
tp g > 20 µs tp g > 20 µs tp g > 20 µs tp g > 20 µs tp g > 20 µs tp g > 20 µs tp g > 20 µs tp g > 20 µs see Note 4

MIN TYP MAX UNIT
-30 -50 mA
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Datasheet ID: TIC253N-S 522282