TIC253 SERIES SILICON TRIACS
Part | Datasheet |
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TIC253D-S (pdf) |
Related Parts | Information |
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TIC253N-S |
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TIC253M-S |
PDF Datasheet Preview |
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TIC253 SERIES SILICON TRIACS ● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGT of 50 mA Quadrants 1 - 3 SOT-93 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDC2ADA absolute maximum ratings over operating case temperature unless otherwise noted RATING VALUE UNIT OBSOLETE TIC253D Repetitive peak off-state voltage see Note 1 TIC253M TIC253S TIC253N Full-cycle RMS on-state current at or below 70°C case temperature see Note 2 Peak on-state surge current full-sine-wave at or below 25°C case temperature see Note 3 Peak gate current Operating case temperature range Storage temperature range Lead temperature mm from case for 10 seconds VDRM IT RMS ITSM IGM TC Tstg TL 600 V -40 to +110 -40 to +125 electrical characteristics at 25°C case temperature unless otherwise noted IDRM PARAMETER Repetitive peak off-state current Gate trigger current Gate trigger voltage On-state voltage VD = Rated VDRM Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† IT = A TEST CONDITIONS IG = 0 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 IG = 50 mA TC = 110°C tp g > 20 µs tp g > 20 µs tp g > 20 µs tp g > 20 µs tp g > 20 µs tp g > 20 µs tp g > 20 µs tp g > 20 µs see Note 4 MIN TYP MAX UNIT -30 -50 mA |
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