FJX4004RTF
FJX4004RTF Datasheet
FJX4004R
| Part | Datasheet |
|---|---|
FJX4004RTF |
FJX4004RTF (pdf) |
| PDF Datasheet Preview |
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| FJX4004R FJX4004R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJX3004R 2 1 SOT-323 Base Emitter Collector Marking Equivalent Circuit C PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCE= -10V, IC=-5mA VCB= -10V, IE=0 f=1.0MHz VI off VI on R1/R2 Input Off Voltage Input On Voltage Input Resistor Ratio VCE= -5V, IC= -100µA VCE= -0.3V, IC= -2mA Value -50 -50 -10 -100 200 150 -55 ~ 150 Units V mA mW °C °C Min. -50 -50 68 Typ. Max. Units V µA 2002 Fairchild Semiconductor Corporation FJX4004R Typical Characteristics 1000 VCE = - 5V R1 = 47 K R2 = 47 K hFE, DC CURRENT GAIN IC [µA], COLLECTOR CURRENT 10 -1 -100 -1000 IC[mA], COLLECTOR CURRENT Figure DC current Gain |
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