TIC116N-S

TIC116N-S Datasheet

TIC116 SERIES SILICON CONTROLLED RECTIFIERS

Part	Datasheet
TIC116N-S	TIC116N-S (pdf)

Related Parts	Information
TIC116M-S	TIC116M-S
TIC116S-S	TIC116S-S
TIC116D-S	TIC116D-S

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TIC116 SERIES SILICON CONTROLLED RECTIFIERS 8 A Continuous On-State Current 80 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 20 mA This series is obsolete and not recommended for new designs. TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDC1ACA absolute maximum ratings over operating case temperature unless otherwise noted RATING TIC116D OBSOLETE Repetitive peak off-state voltage TIC116M TIC116S TIC116N TIC116D TIC116M TIC116S TIC116N Continuous on-state current at or below 70°C case temperature see Note 1 Average on-state current 180° conduction angle at or below 70°C case temperature see Note 2 Surge on-state current at or below 25°C case temperature see Note 3 Peak positive gate current pulse width 300 µs Peak gate power dissipation pulse width 300 µs Average gate power dissipation see Note 4 Operating case temperature range Storage temperature range VDRM VRRM IT RMS IT AV ITM IGM PGM PG AV TC Tstg Lead temperature mm from case for 10 seconds VALUE 400 600 700 800 400 600 700 800 8 80 3 5 1 -40 to +110 -40 to +125 230 UNIT A W °C °C °C TIC116 SERIES SILICON CONTROLLED RECTIFIERS electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IDRM Repetitive peak off-state current VD = rated VDRM

PDF Datasheet Preview

TIC116 SERIES SILICON CONTROLLED RECTIFIERS
8 A Continuous On-State Current 80 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 20 mA

This series is obsolete and not recommended for new designs.

TO-220 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDC1ACA
absolute maximum ratings over operating case temperature unless otherwise noted

RATING

TIC116D

OBSOLETE Repetitive peak off-state voltage

TIC116M TIC116S

TIC116N

TIC116D

TIC116M TIC116S

TIC116N

Continuous on-state current at or below 70°C case temperature see Note 1

Average on-state current 180° conduction angle at or below 70°C case temperature
see Note 2

Surge on-state current at or below 25°C case temperature see Note 3

Peak positive gate current pulse width 300 µs

Peak gate power dissipation pulse width 300 µs

Average gate power dissipation see Note 4

Operating case temperature range

Storage temperature range

VDRM

VRRM

IT RMS IT AV ITM IGM PGM PG AV

TC Tstg

Lead temperature mm from case for 10 seconds

VALUE 400 600 700 800 400 600 700 800 8
80 3 5 1 -40 to +110 -40 to +125 230

UNIT

A W °C °C °C

TIC116 SERIES SILICON CONTROLLED RECTIFIERS
electrical characteristics at 25°C case temperature unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

IDRM

Repetitive peak off-state current

VD = rated VDRM

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Datasheet ID: TIC116N-S 522273