FGS15N40LTF
FGS15N40LTF Datasheet
FGS15N40L
| Part | Datasheet |
|---|---|
FGS15N40LTF |
FGS15N40LTF (pdf) |
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| FGS15N40L FGS15N40L September 2001 IGBT Insulated Gate Bipolar Transistors IGBTs with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for strobe application • High Input Impedance • High Peak Current Capability 130A • Easy Gate Drive Application • Strobe Flash 8-SOP Absolute Maximum Ratings TC = 25°C unless otherrwise noted VCES VGES ICM 1 PC TJ Tstg Description Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering PurPoses from case for 5 secnds Ta = 25°C Notes 1 Repetitive rating Pulse width limited by max. junction temperature FGS15N40L 400 ±6 130 -40 to +150 -40 to +150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient PCB Mount Notes Mounted on 1” square PCB FR4 or G-10 Material Typ. -- Max. Units V A W °C °C °C Units °C/W 2001 Fairchild Semiconductor Corporation FGS15N40L Electrical Characteristics of IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector Cut-off Current G-E leakage Current On Characteristics VGE th VCE sat G-E threshold Voltage C-E Saturation Voltage Dynamic Characteristics Cies Coes Cres Switching Characteristics td on tr td off tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes Recommendation of Rg Value Rg VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V |
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