BU406-S

BU406-S Datasheet

BU406, BU407 NPN SILICON POWER TRANSISTORS

Part	Datasheet
BU406-S	BU406-S (pdf)

Related Parts	Information
BU407-S	BU407-S

PDF Datasheet Preview
BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A Peak Collector Current 60 W at 25°C Case Temperature This series is obsolete and not recommended for new designs. TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING OBSOLETE Collector-base voltage IE = 0 Collector-emitter voltage VBE = -2 V Collector-emitter voltage IB = 0 Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous base current Continuous device dissipation at or below 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1 This value applies for tp 10 ms, duty cycle BU406 BU407 BU406 BU407 BU406 BU407 VCBO VCEX VCEO VEB IC ICM IB Ptot Tj Tstg VALUE 400 330 400 330 200 150 6 7 15 4 60 -55 to +150 -55 to +150 UNIT V A W °C °C BU406, BU407 NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Collector-emitter V BR CEO breakdown voltage IC = 30 mA IB = 0 Collector-emitter ICES cut-off current IEBO Emitter cut-off current VCE = 400 V VCE = 330 V VCE = 250 V VCE = 200 V VCE = 250 V VCE = 200 V VEB = 6 V VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 IC = 0 TC = 150°C TC = 150°C BU406 BU407 BU406 BU407 BU406 BU407 hFE VCE sat Forward current transfer ratio Collector-emitter saturation voltage

PDF Datasheet Preview

BU406, BU407 NPN SILICON POWER TRANSISTORS
7 A Continuous Collector Current 15 A Peak Collector Current 60 W at 25°C Case Temperature

This series is obsolete and not recommended for new designs.

TO-220 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDTRACA
absolute maximum ratings at 25°C case temperature unless otherwise noted

RATING

OBSOLETE Collector-base voltage IE = 0

Collector-emitter voltage VBE = -2 V

Collector-emitter voltage IB = 0

Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous base current Continuous device dissipation at or below 25°C case temperature Operating junction temperature range Storage temperature range

NOTE 1 This value applies for tp 10 ms, duty cycle

BU406 BU407 BU406 BU407 BU406 BU407

VCBO

VCEX

VCEO

VEB IC ICM IB Ptot Tj Tstg

VALUE
400 330 400 330 200 150
6 7 15 4 60 -55 to +150 -55 to +150

UNIT

V A W °C °C

BU406, BU407 NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-emitter V BR CEO breakdown voltage

IC = 30 mA IB = 0

Collector-emitter ICES cut-off current

IEBO

Emitter cut-off current

VCE = 400 V VCE = 330 V VCE = 250 V VCE = 200 V VCE = 250 V VCE = 200 V

VEB = 6 V

VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0

IC = 0

TC = 150°C TC = 150°C

BU406 BU407 BU406 BU407 BU406 BU407
hFE VCE sat

Forward current transfer ratio Collector-emitter saturation voltage

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BU406-S Datasheet file may be downloaded here without warranties.

Datasheet ID: BU406-S 522142