BD545C-S

BD545C-S Datasheet

BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS

Part	Datasheet
BD545C-S	BD545C-S (pdf)

Related Parts	Information
BD545B-S	BD545B-S
BD545-S	BD545-S
BD545A-S	BD545A-S

PDF Datasheet Preview
BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING BD545 OBSOLETE Collector-base voltage IE = 0 Collector-emitter voltage IB = 0 see Note 1 Emitter-base voltage Continuous collector current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature mm from case for 10 seconds BD545A BD545B BD545C BD545 BD545A BD545B BD545C NOTES These values apply when the base-emitter diode is open circuited. VCBO VCEO VEBO IC Ptot TA Tj Tstg TL Derate linearly to 150°C case temperature at the rate of W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. VALUE 40 60 80 100 40 60 80 100 5 15 85 -65 to +150 -65 to +150 -65 to +150 260 UNIT V A W °C °C °C °C PRODUCT INFORMATION BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX BD545 Collector-emitter V BR CEO breakdown voltage IC = 30 mA see Note 4 IB = 0 BD545A BD545B BD545C VCE = 40 V VBE = 0 BD545 Collector-emitter ICES cut-off current VCE = 60 V VCE = 80 V

PDF Datasheet Preview

BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS
● Designed for Complementary Use with the BD546 Series
● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available

SOT-93 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDTRAAA
absolute maximum ratings at 25°C case temperature unless otherwise noted

RATING

BD545

OBSOLETE Collector-base voltage IE = 0

Collector-emitter voltage IB = 0 see Note 1

Emitter-base voltage Continuous collector current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature mm from case for 10 seconds

BD545A BD545B BD545C BD545 BD545A BD545B BD545C

NOTES These values apply when the base-emitter diode is open circuited.

VCBO

VCEO

VEBO IC Ptot TA Tj Tstg TL

Derate linearly to 150°C case temperature at the rate of W/°C.

Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

VALUE
40 60 80 100 40 60 80 100 5 15 85 -65 to +150 -65 to +150 -65 to +150 260

UNIT

V A W °C °C °C °C

PRODUCT INFORMATION

BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN TYP MAX

BD545

Collector-emitter V BR CEO breakdown voltage

IC = 30 mA see Note 4

IB = 0

BD545A

BD545B

BD545C

VCE = 40 V

VBE = 0

BD545

Collector-emitter ICES cut-off current

VCE = 60 V VCE = 80 V

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BD545C-S Datasheet file may be downloaded here without warranties.

Datasheet ID: BD545C-S 522107