BD545B-S

BD545B-S Datasheet


BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS

Part Datasheet
BD545B-S BD545B-S BD545B-S (pdf)
Related Parts Information
BD545C-S BD545C-S BD545C-S
BD545-S BD545-S BD545-S
BD545A-S BD545A-S BD545A-S
PDF Datasheet Preview
BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS
● Designed for Complementary Use with the BD546 Series
● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available

SOT-93 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDTRAAA
absolute maximum ratings at 25°C case temperature unless otherwise noted

RATING

BD545

OBSOLETE Collector-base voltage IE = 0

Collector-emitter voltage IB = 0 see Note 1

Emitter-base voltage Continuous collector current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature mm from case for 10 seconds

BD545A BD545B BD545C BD545 BD545A BD545B BD545C

NOTES These values apply when the base-emitter diode is open circuited.

VCBO

VCEO

VEBO IC Ptot TA Tj Tstg TL

Derate linearly to 150°C case temperature at the rate of W/°C.

Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

VALUE
40 60 80 100 40 60 80 100 5 15 85 -65 to +150 -65 to +150 -65 to +150 260

UNIT

V A W °C °C °C °C

PRODUCT INFORMATION

BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN TYP MAX

BD545

Collector-emitter V BR CEO breakdown voltage

IC = 30 mA see Note 4

IB = 0

BD545A

BD545B

BD545C

VCE = 40 V

VBE = 0

BD545

Collector-emitter ICES cut-off current

VCE = 60 V VCE = 80 V
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Datasheet ID: BD545B-S 522107