TIPL765A-S

TIPL765A-S Datasheet

TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS

Part	Datasheet
TIPL765A-S	TIPL765A-S (pdf)

Related Parts	Information
TIPL765-S	TIPL765-S

PDF Datasheet Preview
TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability ● 125 W at 25°C Case Temperature SOT-93 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING TIPL765 OBSOLETE Collector-base voltage IE = 0 Collector-emitter voltage VBE = 0 Collector-emitter voltage IB = 0 Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous device dissipation at or below 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1 This value applies for tp 10 ms, duty cycle TIPL765A TIPL765 TIPL765A TIPL765 TIPL765A VCBO VCES VCEO VEBO IC ICM Ptot Tj Tstg VALUE 850 1000 850 1000 400 450 10 15 125 -65 to +150 -65 to +150 UNIT V A W °C °C PRODUCT INFORMATION TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Collector-emitter TIPL765 VCEO sus sustaining voltage IC = 100 mA L = 25 mH see Note 2 TIPL765A Collector-emitter ICES cut-off current ICEO IEBO Collector cut-off current Emitter cut-off current VCE = 850 V VCE = 1000 V VCE = 850 V VCE = 1000 V VCE = 400 V VCE = 450 V VEB = 10 V VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0

PDF Datasheet Preview

TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS
● Rugged Triple-Diffused Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed
at 100°C ● 1000 Volt Blocking Capability ● 125 W at 25°C Case Temperature

SOT-93 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDTRAAA
absolute maximum ratings at 25°C case temperature unless otherwise noted

RATING

TIPL765

OBSOLETE Collector-base voltage IE = 0

Collector-emitter voltage VBE = 0

Collector-emitter voltage IB = 0

Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous device dissipation at or below 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1 This value applies for tp 10 ms, duty cycle

TIPL765A TIPL765 TIPL765A TIPL765 TIPL765A

VCBO

VCES

VCEO

VEBO IC ICM Ptot Tj Tstg

VALUE
850 1000 850 1000 400 450
10 15 125 -65 to +150 -65 to +150

UNIT

V A W °C °C

PRODUCT INFORMATION

TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-emitter

TIPL765

VCEO sus sustaining voltage

IC = 100 mA L = 25 mH
see Note 2

TIPL765A

Collector-emitter ICES cut-off current

ICEO IEBO

Collector cut-off current Emitter cut-off current

VCE = 850 V VCE = 1000 V VCE = 850 V VCE = 1000 V VCE = 400 V VCE = 450 V

VEB = 10 V

VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0

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Datasheet ID: TIPL765A-S 522304