BD544A-S
BD544A-S Datasheet
BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS
| Part | Datasheet |
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BD544A-S |
BD544A-S (pdf) |
| Related Parts | Information |
|---|---|
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BD544-S |
BD544-S |
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BD544C-S |
BD544C-S |
| PDF Datasheet Preview |
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| BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD543 Series 70 W at 25°C Case Temperature 8 A Continuous Collector Current 10 A Peak Collector Current Customer-Specified Selections Available TO-220 PACKAGE TOP VIEW This series is not recommended for new designs. Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING BD544 OBSOLETE Collector-base voltage IE = 0 Collector-emitter voltage IB = 0 Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature mm from case for 10 seconds BD544A BD544B BD544C BD544 BD544A BD544B BD544C VCBO VCEO VEBO IC ICM Ptot TA Tj Tstg TL NOTES This value applies for tp ms, duty cycle Derate linearly to 150°C case temperature at the rate of W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VALUE -40 -60 -80 -100 -40 -60 -80 -100 -5 -8 -10 70 2 -65 to +150 -65 to +150 -65 to +150 260 UNIT V A W °C °C °C °C BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX BD544 Collector-emitter V BR CEO breakdown voltage IC = -30 mA see Note 4 IB = 0 BD544A BD544B BD544C -60 -80 -100 VCE = -40 V VBE = 0 BD544 Collector-emitter ICES cut-off current VCE = -60 V VCE = -80 V |
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