AON7202L

AON7202L Datasheet

AON7202

Part	Datasheet
AON7202L	AON7202L (pdf)

Related Parts	Information
AON7202_101	AON7202_101
AON7202	AON7202

PDF Datasheet Preview
AON7202 30V N-Channel MOSFET The AON7202 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS ON and Crss.In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode. Product Summary VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V 100% UIS Tested 100% Rg Tested 30V 40A < < DFN 3x3 EP Top View Bottom View Top View 1 2 3 4 Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current G TC=25°C TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 40 31 150 20 16 38 72 36 14 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 30 60 Maximum Junction-to-Case Steady-State Max 40 75

PDF Datasheet Preview

AON7202
30V N-Channel MOSFET

The AON7202 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS ON and Crss.In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode.

Product Summary

VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V
100% UIS Tested 100% Rg Tested
30V 40A < <

DFN 3x3 EP

Top View

Bottom View

Top View
1 2 3 4

Pin 1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current G

TC=25°C TC=100°C

Pulsed Drain Current C

Continuous Drain TA=25°C

Current

TA=70°C

Avalanche Current C

Avalanche energy L=0.1mH C

IDSM

IAS, IAR EAS, EAR

TC=25°C Power Dissipation B TC=100°C

TA=25°C Power Dissipation A TA=70°C

PDSM

Junction and Storage Temperature Range

TJ, TSTG

Maximum 30 ±20 40 31 150 20 16 38 72 36 14 2
-55 to 150

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State
30 60

Maximum Junction-to-Case

Steady-State

Max 40 75

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Datasheet ID: AON7202L 516274