BD539C-S

BD539C-S Datasheet

BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS

Part	Datasheet
BD539C-S	BD539C-S (pdf)

Related Parts	Information
BD539A-S	BD539A-S
BD539-S	BD539-S
BD539B-S	BD539B-S

PDF Datasheet Preview
BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD540 Series 45 W at 25°C Case Temperature 5 A Continuous Collector Current Up to 120 V VCEO rating This series is obsolete and not recommended for new designs. TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING BD539 OBSOLETE Collector-base voltage Collector-emitter voltage see Note 1 Emitter-base voltage Continuous collector current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Operating free air temperature range Operating junction temperature range Storage temperature range BD539A BD539B BD539C BD539D BD539 BD539A BD539B BD539C BD539D VCBO VCEO VEBO IC Ptot TA Tj Tstg Lead temperature mm from case for 10 seconds NOTES These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VALUE 40 60 80 100 120 40 60 80 100 120 5 45 2 -65 to +150 -65 to +150 -65 to +150 260 UNIT V A W °C °C °C °C BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX BD539 Collector-emitter V BR CEO breakdown voltage IC = 30 mA see Note 4 IB = 0 BD539A BD539B BD539C BD539D VCE = 40 V VBE = 0 BD539 Collector-emitter VCE = 60 V

PDF Datasheet Preview

BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS

Designed for Complementary Use with the BD540 Series 45 W at 25°C Case Temperature 5 A Continuous Collector Current Up to 120 V VCEO rating

This series is obsolete and not recommended for new designs.

TO-220 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDTRACA
absolute maximum ratings at 25°C case temperature unless otherwise noted

RATING

BD539

OBSOLETE Collector-base voltage

Collector-emitter voltage see Note 1

Emitter-base voltage Continuous collector current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Operating free air temperature range Operating junction temperature range Storage temperature range

BD539A BD539B BD539C BD539D BD539 BD539A BD539B BD539C BD539D

VCBO

VCEO

VEBO IC Ptot TA Tj Tstg

Lead temperature mm from case for 10 seconds

NOTES These values apply when the base-emitter diode is open circuited.

Derate linearly to 150°C case temperature at the rate of W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

VALUE
40 60 80 100 120 40 60 80 100 120 5 45 2 -65 to +150 -65 to +150 -65 to +150 260

UNIT

V A W °C °C °C °C

BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN TYP MAX

BD539

Collector-emitter V BR CEO breakdown voltage

IC = 30 mA see Note 4

IB = 0

BD539A

BD539B

BD539C

BD539D

VCE = 40 V

VBE = 0

BD539

Collector-emitter

VCE = 60 V

More datasheets: PI4ULS3V08ZFEX | PI4ULS3V08ZFE | 60921HB1-A | FGH60N6S2 | M52893 SL005 | M52893 SL002 | M52893 SL001 | BD539A-S | BD539-S | BD539B-S

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BD539C-S Datasheet file may be downloaded here without warranties.

Datasheet ID: BD539C-S 522101