HMC413QS16G
HMC413QS16G Datasheet
HMC413* Product Page Quick Links
| Part | Datasheet |
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HMC413QS16G |
HMC413QS16G (pdf) |
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| Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED HMC413* Product Page Quick Links Last Content Update 08/30/2016 Comparable Parts View a parametric search of comparable parts Evaluation Kits • HMC413QS16G Evaluation Board Documentation Application Notes • AN-1363 Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers • Broadband Biasing of Amplifiers General Application Note • MMIC Amplifier Biasing Procedure Application Note • Thermal Management for Surface Mount Components General Application Note Data Sheet • HMC413 Data Sheet Tools and Simulations • HMC413 S-Parameter Reference Materials Quality Documentation • HMC Legacy PCN QS##, QS##E and QS##G,QS##GE Design Resources • HMC413 Material Declaration • PCN-PDN Information • Quality And Reliability • Symbols and Footprints Discussions View all HMC413 EngineerZone Discussions Sample and Buy Visit the product page to see pricing options Technical Support Submit a technical question or find your regional support number THIS PAGE INTENTIONALLY LEFT BLANK HMC413QS16G / 413QS16GE v04.0505 GaAs InGaP HBT MMIC POWER AMPLIFIER, - GHz LINEAR & POWER AMPLIFIERS - SMT This amplifier is ideal for use as a power/driver amplifier for - GHz applications • Cellular / PCS / 3G • Portable & Infrastructure • Wireless Local Loop Functional Diagram Gain 23 dB Saturated Power dBm 42% PAE Supply Voltage +2.75V to +5V Power Down Capability Low External Part Count Included in the HMC-DK002 Designer’s Kit The HMC413QS16G & HMC413QS16GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC Power amplifiers which operate between and GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 23 dB of gain, dBm of saturated power at 42% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control. 11 - 50 Electrical Specifications, TA = +25° C, As a Function of Vs, Vpd = 3.6V Parameter Frequency Vs= 3.6V Vs= 5V Min. Typ. Max. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material Rogers 4350 11 - 56 For price, delivery, and to place orders, please contact Hittite Microwave Corporation 20 Alpha Road, Chelmsford, MA 01824 Phone 978-250-3343 Fax 978-250-3373 Order On-line at Application Circuit v04.0505 HMC413QS16G / 413QS16GE GaAs InGaP HBT MMIC POWER AMPLIFIER, - GHz LINEAR & POWER AMPLIFIERS - SMT Impedance Length TL1 50 Ohm TL2 50 Ohm TL3 50 Ohm * For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 3 and For price, delivery, and to place orders, please contact Hittite Microwave Corporation 20 Alpha Road, Chelmsford, MA 01824 Phone 978-250-3343 Fax 978-250-3373 Order On-line at 11 - 57 |
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