AOD4158P
AOD4158P Datasheet
AOD4158P
| Part | Datasheet |
|---|---|
AOD4158P |
AOD4158P (pdf) |
| PDF Datasheet Preview |
|---|
| AOD4158P 30V N-Channel AlphaMOS • Latest Trench Power MOSFET technology • Very Low RDS on at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V Application • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 46A < < TO252 DPAK TopView Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentG TC=25°C TC=100°C Pulsed Drain Current C Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C Avalanche energy L=0.1mH C VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 46 34 145 13 11 25 31 36 32 15 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 15 40 Maximum Junction-to-Case Steady-State Max 20 50 |
| More datasheets: CY7C0831AV-133BBXI | 1N6264 | STS210101CHIP | STS210101L360500U129 | STS210101L360500G918 | DFR0229 | 3597 | 2090134203 | B88069X2450T702 | 15018 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived AOD4158P Datasheet file may be downloaded here without warranties.