FJN4307R
Part | Datasheet |
---|---|
![]() |
FJN4307RBU (pdf) |
Related Parts | Information |
---|---|
![]() |
FJN4307RTA |
PDF Datasheet Preview |
---|
FJN4307R FJN4307R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJN3307R TO-92 Emitter Collector Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter Value Units VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -100 -55 ~ 150 Equivalent Circuit Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCB= -10V, IE=0 f=1MHz fT VI off VI on R1/R2 Current Gain-Bandwidth Product Input Off Voltage Input On Voltage Input Resistor Ratio VCE= -10V, IC= -5mA VCE= -5V, IC= -100µA VCE= -0.3V, IC= -2mA Min. -50 -50 68 Typ. 200 22 Max. Units V µA V pF MHz V 2002 Fairchild Semiconductor Corporation FJN4307R Typical Characteristics hFE, DC CURRENT GAIN 1000 100 VCE = - 5V R1 = 22K R2 = 47K -100 IC[mA], COLLECTOR CURRENT Figure DC current Gain -10k |
More datasheets: STS210101CHIP | STS210101L360500U129 | STS210101L360500G918 | DFR0229 | 3597 | 2090134203 | B88069X2450T702 | 15018 | AOD4158P | FJN4307RTA |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FJN4307RBU Datasheet file may be downloaded here without warranties.