BLF8G22LS-160BVX
BLF8G22LS-160BVX Datasheet
BLF8G22LS-160BV
| Part | Datasheet |
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BLF8G22LS-160BVX |
BLF8G22LS-160BVX (pdf) |
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| BLF8G22LS-160BV Power LDMOS transistor Product profile 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2000 MHz to 2200 MHz. Table Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal VDS PL AV ACPR mA V W dB % dBc 2-carrier W-CDMA 2110 to 2170 1300 32 55 32 [1] [1] Test signal 3GPP test model 1 64 DPCH PAR = dB at % probability on CCDF carrier spacing 5 MHz. Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Decoupling leads to enable improved video bandwidth 100 MHz typical Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Integrated current sense Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances RF power amplifier for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range BLF8G22LS-160BV Power LDMOS transistor Pinning information Table Pin 1 2 3 4,5 6 7 Pinning Description drain gate source video decoupling sense gate sense drain [1] Connected to flange. Ordering information Simplified outline Graphic symbol 1, 4, 5 7 aaa-004156 Table Ordering information Type number Package Name Description BLF8G22LS-160BV - earless flanged LDMOST ceramic package 6 leads Version SOT1120B Limiting values Table Limiting values In accordance with the Absolute Maximum Rating System IEC Symbol Parameter Conditions drain-source voltage gate-source voltage VGS sense Tstg Tj Tcase sense gate-source voltage storage temperature junction temperature case temperature [1] Continuous use at maximum temperature will affect MTTF. Min [1] - Max 65 +13 +9 +150 200 150 Unit V C C C Recommended operating conditions Table Symbol Tcase Operating conditions Parameter case temperature Thermal characteristics Conditions Min Typ Max Unit - +125 C BLF8G22LS-160BV#3 Table Symbol Rth j-c Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C PL = 55 W Typ Unit K/W All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. All rights reserved. 2 of 13 BLF8G22LS-160BV Power LDMOS transistor Characteristics Table Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions V BR DSS drain-source breakdown voltage VGS = 0 V ID = mA VGS th IDSS IDSX Ordering information 2 Limiting values. 2 Recommended operating conditions. 2 Thermal characteristics 3 Characteristics 3 Test information 3 Ruggedness in class-AB operation 4 Impedance information 4 VBW in class-AB operation 4 CW pulse 5 2-carrier W-CDMA 6 2-tone VBW 7 Test circuit. 8 Package outline 9 Abbreviations 10 Legal information. 11 Data sheet status 11 Definitions 11 Disclaimers 11 Trademarks. 12 Contact information. 12 Contents 13 BLF8G22LS-160BV Power LDMOS transistor Please be aware that important notices concerning this document and the product s described herein, have been included in section ‘Legal information’. Ampleon The Netherlands B.V. All rights reserved. For more information, please visit For sales office addresses, please visit: Date of release 1 September 2015 Document identifier BLF8G22LS-160BV#3 |
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