AOP607
AOP607 Datasheet
AOP607 Complementary Enhancement Mode Field Effect Transistor
| Part | Datasheet |
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AOP607 |
AOP607 (pdf) |
| PDF Datasheet Preview |
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| AOP607 Complementary Enhancement Mode Field Effect Transistor The AOP607 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP607 is Pbfree meets ROHS & Sony 259 specifications . AOP607L is a Green Product ordering option. AOP607 and AOP607L are electrically identical. n-channel p-channel VDS V = 60V -60V ID = 4.7A VGS=10V -3.4A VGS=-10V RDS ON RDS ON < VGS=10V < VGS =-10V < VGS=4.5V < VGS =-4.5V S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 PDIP-8 G2 S2 n-channel G1 S1 p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Drain-Source Voltage Gate-Source Voltage ±20 Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B Power Dissipation TA=25°C TA=70°C Junction and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Characteristics n-channel and p-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State Device n-ch n-ch Maximum Junction-to-Lead C Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Steady-State t 10s Steady-State n-ch p-ch p-ch |
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