AON6786_001
AON6786_001 Datasheet
AON6786
| Part | Datasheet |
|---|---|
AON6786_001 |
AON6786_001 (pdf) |
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| AON6786 30V N-Channel MOSFET SRFET TM Product Summary SRFETTM AON6786 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V 30V 85A < < 100% UIS Tested 100% Rg Tested Top View DFN5X6 Bottom View PIN1 Top View SRFETTM Soft Recovery MOSFET Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current G TC=25°C TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 85 66 240 22 17 40 80 83 33 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 15 42 Maximum Junction-to-Case Steady-State |
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