AON4407L
AON4407L Datasheet
AON4407L P-Channel Enhancement Mode Field Effect Transistor
| Part | Datasheet |
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AON4407L |
AON4407L (pdf) |
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| AON4407L P-Channel Enhancement Mode Field Effect Transistor The AON4407L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. -RoHS Compliant -Halogen Free VDS V = -12V ID = -9 A VGS = -4.5V RDS ON < VGS = -4.5V RDS ON < VGS = -2.5V RDS ON < VGS = -1.8V ESD Protected! Top View DFN 3x2 Bottom View Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Power Dissipation B TA=25°C TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum -12 ±8 -9 -7 -60 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady State 42 74 50 90 Maximum Junction-to-Lead Steady State Units V A W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AON4407L Electrical Characteristics TJ=25°C unless otherwise noted |
| More datasheets: BRN6044-0008S | BRN6044-0009S | BRN6044-0010S | BRN6044-0012S | BRN6044-0013S | BRN6044-0014S | BRN6044-0015S | 15-21UBC/C430/TR8 | 811102B00000 | 908 |
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