AON4407L

AON4407L Datasheet


AON4407L P-Channel Enhancement Mode Field Effect Transistor

Part Datasheet
AON4407L AON4407L AON4407L (pdf)
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AON4407L P-Channel Enhancement Mode Field Effect Transistor

The AON4407L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch.
-RoHS Compliant -Halogen Free

VDS V = -12V

ID = -9 A

VGS = -4.5V

RDS ON < VGS = -4.5V

RDS ON < VGS = -2.5V

RDS ON < VGS = -1.8V

ESD Protected!

Top View

DFN 3x2 Bottom View

Pin 1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain TA=25°C

Current

TA=70°C

Pulsed Drain Current C

Power Dissipation B TA=25°C TA=70°C

Junction and Storage Temperature Range

TJ, TSTG

Maximum -12 ±8 -9 -7 -60
-55 to 150

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A
t 10s

Maximum Junction-to-Ambient A D Steady State
42 74
50 90

Maximum Junction-to-Lead

Steady State

Units V A

W °C

Units °C/W °C/W °C/W

Alpha & Omega Semiconductor, Ltd.

AON4407L

Electrical Characteristics TJ=25°C unless otherwise noted
More datasheets: BRN6044-0008S | BRN6044-0009S | BRN6044-0010S | BRN6044-0012S | BRN6044-0013S | BRN6044-0014S | BRN6044-0015S | 15-21UBC/C430/TR8 | 811102B00000 | 908


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Datasheet ID: AON4407L 516248