AOL1428

AOL1428 Datasheet


AOL1428 N-Channel Enhancement Mode Field Effect Transistor

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AOL1428 AOL1428 AOL1428 (pdf)
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AOL1428 N-Channel Enhancement Mode Field Effect Transistor

The AOL1428 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.
-RoHS Compliant -Halogen and Antimony Free Green Device*

VDS V = 30V ID = 45A VGS = 10V RDS ON VGS = 10V RDS ON VGS = 4.5V

UIS Tested Rg,Ciss,Coss,Crss Tested

Ultra SO-8TM Top View

Bottom tab connected to drain

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain TC=25°C

Current B

TC=100°C

Pulsed Drain Current

Continuous Drain TA=25°C

Current H

TA=70°C

IDSM

Avalanche Current C

Repetitive avalanche energy L=0.3mH C

TC=25°C Power Dissipation B TC=100°C

TA=25°C Power Dissipation A TA=70°C

PDSM

Junction and Storage Temperature Range TJ, TSTG

Maximum 30 ±20 49 34 120 11 9 30 135 43 21
-55 to 175

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
t 10s Steady-State
19 45
25 55

Maximum Junction-to-Case C

Steady-State

Units V

A mJ W

W °C

Units °C/W °C/W °C/W

Alpha & Omega Semiconductor, Ltd.

AOL1428
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Datasheet ID: AOL1428 516244