AOD2HC60

AOD2HC60 Datasheet

AOD2HC60

Part	Datasheet
AOD2HC60	AOD2HC60 (pdf)

PDF Datasheet Preview
AOD2HC60 600V,2.5A N-Channel MOSFET Product Summary The AOD2HC60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS Tj,max IDM RDS ON ,max Qg,typ Eoss 400V 100% UIS Tested! 100% Rg Tested! 700 14A < 7.6nC 1.6µC Top View TO252 DPAK Bottom View AOD2HC60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentB TC=25°C TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±30 2 14 28 132 100 20 74 -50 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Typical 45 Maximum 55 Units V A mJ V/ns W/ oC °C °C Units °C/W °C/W °C/W Page 1 of 6 AOD2HC60 Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions Min Typ Max Units

PDF Datasheet Preview

AOD2HC60
600V,2.5A N-Channel MOSFET

Product Summary

The AOD2HC60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.

VDS Tj,max IDM RDS ON ,max Qg,typ Eoss 400V
100% UIS Tested! 100% Rg Tested!
700 14A < 7.6nC 1.6µC

Top View

TO252 DPAK

Bottom View

AOD2HC60

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain CurrentB

TC=25°C TC=100°C

Pulsed Drain Current C

Avalanche Current C

Repetitive avalanche energy C

Single pulsed avalanche energy H

MOSFET dv/dt ruggedness Peak diode recovery dv/dt

IDM IAR EAR EAS dv/dt

TC=25°C Power Dissipation B Derate above 25oC

Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds

TJ, TSTG TL

Maximum 600 ±30 2 14 28 132 100 20 74
-50 to 150

Thermal Characteristics

Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F

Typical 45

Maximum 55

Units V

A mJ V/ns W/ oC °C °C

Units °C/W °C/W °C/W

Page 1 of 6

AOD2HC60

Electrical Characteristics TJ=25°C unless otherwise noted

Parameter

Conditions

Min Typ Max Units

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Datasheet ID: AOD2HC60 516216