AOD206_030

AOD206_030 Datasheet

AOD206/AOI206

Part	Datasheet
AOD206_030	AOD206_030 (pdf)

Related Parts	Information
AOI206_002	AOI206_002
AOD206_001	AOD206_001

PDF Datasheet Preview
AOD206/AOI206 30V N-Channel AlphaMOS • Latest Trench Power MOSFET technology • Very Low RDS on at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V Application • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 46A < < TopView TO252 DPAK Bottom View Top View TO-251A IPAK Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current G TC=25°C TC=100°C Pulsed Drain Current C Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C Avalanche energy L=0.1mH C VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 46 36 170 18 14 29 42 36 50 25 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 16 41

PDF Datasheet Preview

AOD206/AOI206
30V N-Channel AlphaMOS
• Latest Trench Power MOSFET technology
• Very Low RDS on at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant

Product Summary

VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V

Application
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested 100% Rg Tested
30V 46A < <

TopView

TO252 DPAK

Bottom View

Top View

TO-251A IPAK

Bottom View

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current G

TC=25°C TC=100°C

Pulsed Drain Current C

Continuous Drain Current

TA=25°C TA=70°C

IDSM

Avalanche Current C

Avalanche energy L=0.1mH C

VDS Spike
100ns

VSPIKE

TC=25°C Power Dissipation B TC=100°C

TA=25°C Power Dissipation A TA=70°C

PDSM

Junction and Storage Temperature Range

TJ, TSTG

Maximum 30 ±20 46 36 170 18 14 29 42 36 50 25
-55 to 175

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State
16 41

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Datasheet ID: AOD206_030 516214