AO4726

AO4726 Datasheet


AO4726/AO4726L, rev A

Part Datasheet
AO4726 AO4726 AO4726 (pdf)
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AOS Semiconductor Product Reliability Report

Plastic Encapsulated Device

ALPHA & OMEGA Semiconductor, Inc
495 Mercury Drive Sunnyvale, CA 94085 U.S.

Tel 408 830-9742

Mar 4, 2008

Table of Contents:

Product Description

Package and Die information

III. Environmental Stress Test Summary and Result

IV. Reliability Evaluation

Quality Assurance Information

I. Product Description:

The AO4726 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter
10 sec

Steady state

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

TA=25°C TA=70°C IDSM
±12

Pulsed Drain Current

Avalanche Current

Repetitive avalanche energy

L=0.3mH

Power Dissipation Junction and Storage Temperature Range

TA=25°C TA=70°C

PDSM TJ, TSTG
-55 to 150

Units V

A mJ W

Thermal Characteristics Parameter Maximum Junction-toAmbient Maximum Junction-toAmbient

Maximum Junction-to-Lead

T 10s

SteadyState

SteadyState

Units
°C/W
°C/W
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Datasheet ID: AO4726 516188