AO4726
AO4726 Datasheet
AO4726/AO4726L, rev A
| Part | Datasheet |
|---|---|
AO4726 |
AO4726 (pdf) |
| PDF Datasheet Preview |
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| AOS Semiconductor Product Reliability Report Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel 408 830-9742 Mar 4, 2008 Table of Contents: Product Description Package and Die information III. Environmental Stress Test Summary and Result IV. Reliability Evaluation Quality Assurance Information I. Product Description: The AO4726 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter 10 sec Steady state Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C TA=70°C IDSM ±12 Pulsed Drain Current Avalanche Current Repetitive avalanche energy L=0.3mH Power Dissipation Junction and Storage Temperature Range TA=25°C TA=70°C PDSM TJ, TSTG -55 to 150 Units V A mJ W Thermal Characteristics Parameter Maximum Junction-toAmbient Maximum Junction-toAmbient Maximum Junction-to-Lead T 10s SteadyState SteadyState Units °C/W °C/W |
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