AO4474
AO4474 Datasheet
AO4474
| Part | Datasheet |
|---|---|
AO4474 |
AO4474 (pdf) |
| PDF Datasheet Preview |
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| AO4474 30V N-Channel MOSFET The AO4474 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Product Summary VDS V = 30V ID = 13.4A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current A, F TA=70°C IDSM Pulsed Drain Current B Power Dissipation TA=25°C TA=70°C Avalanche Current B, G Repetitive avalanche energy 0.1mH B, G Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 60 42 88 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 28 57 34 71 Maximum Junction-to-Lead C Steady-State Units V W A mJ °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. |
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