AO4456

AO4456 Datasheet

AO4456

Part	Datasheet
AO4456	AO4456 (pdf)

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AO4456 30V N-Channel MOSFET SRFET TM Product Summary SRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V 30V 20A < < 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View SRFETTM Soft Recovery MOSFET Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current G TC=25°C TC=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C IDM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 20 16 120 47 110 -55 to 150 Units V A mJ W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 31 59 Maximum Junction-to-Lead Steady-State Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 7 AO4456 Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions

PDF Datasheet Preview

AO4456
30V N-Channel MOSFET

SRFET TM

Product Summary

SRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.

VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V
30V 20A < <
100% UIS Tested 100% Rg Tested

Top View

SOIC-8 Bottom View

SRFETTM Soft Recovery MOSFET Integrated Schottky Diode

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current G

TC=25°C TC=70°C

Pulsed Drain Current C

Avalanche Current C

Avalanche energy L=0.1mH C

IDM IAS, IAR EAS, EAR

TC=25°C Power Dissipation B TC=70°C

Junction and Storage Temperature Range

TJ, TSTG

Maximum 30 ±12 20 16 120 47 110
-55 to 150

Units V

A mJ W °C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State
31 59

Maximum Junction-to-Lead

Steady-State

Max 40 75 24

Units °C/W °C/W °C/W

Page 1 of 7

AO4456

Electrical Characteristics TJ=25°C unless otherwise noted

Parameter

Conditions

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Datasheet ID: AO4456 516173