AO3414L_105

AO3414L_105 Datasheet

AO3414, AO3414L Green Product N-Channel Enhancement Mode Field Effect Transistor

Part	Datasheet
AO3414L_105	AO3414L_105 (pdf)

Related Parts	Information
AO3414L	AO3414L

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AO3414, AO3414L Green Product N-Channel Enhancement Mode Field Effect Transistor The AO3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO3414L Green Product is offered in a lead-free package. VDS V = 20V ID = A RDS ON < VGS = 4.5V RDS ON < VGS = 2.5V RDS ON < VGS = 1.8V TO-236 SOT-23 Top View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 15 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 70 100 Maximum Junction-to-Lead C Steady-State Max 90 125 80 Units V W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO3414, AO3414L Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=16V, VGS=0V IGSS VGS th ID ON RDS ON gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS=±8V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=4.5V, ID=4.2A

PDF Datasheet Preview

AO3414, AO3414L Green Product N-Channel Enhancement Mode Field Effect Transistor

The AO3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO3414L Green Product is offered in a lead-free package.

VDS V = 20V ID = A RDS ON < VGS = 4.5V RDS ON < VGS = 2.5V RDS ON < VGS = 1.8V

TO-236 SOT-23 Top View

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain TA=25°C

Current A

TA=70°C

Pulsed Drain Current B

TA=25°C Power Dissipation A TA=70°C

Junction and Storage Temperature Range TJ, TSTG

Maximum 20 ±8 15
-55 to 150

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
t 10s Steady-State
70 100

Maximum Junction-to-Lead C

Steady-State

Max 90 125 80

Units V

W °C

Units °C/W °C/W °C/W

Alpha & Omega Semiconductor, Ltd.

AO3414, AO3414L

Electrical Characteristics TJ=25°C unless otherwise noted

Parameter

Conditions

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

ID=250µA, VGS=0V VDS=16V, VGS=0V

IGSS VGS th ID ON

RDS ON
gFS VSD IS

Gate-Body leakage current Gate Threshold Voltage On state drain current

VDS=0V, VGS=±8V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=4.5V, ID=4.2A

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Datasheet ID: AO3414L_105 516156