FJZ945GTF

FJZ945GTF Datasheet

FJZ945

Part	Datasheet
FJZ945GTF	FJZ945GTF (pdf)

Related Parts	Information
FJZ945OTF	FJZ945OTF
FJZ945LTF	FJZ945LTF
FJZ945YTF	FJZ945YTF

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FJZ945 FJZ945 Audio Frequency Amplifier & High Frequency OSC. • Complement to FJZ733 • Collector-Base Voltage VCBO=60V • High Current Gain Bandwidth Product fT=300MHz Typ. NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE VCE sat fT Cob NF Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure IC=100µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=40V, IE=0 VEB=3V, IC=0 VCE=6V, IC=1.0mA IC=100mA, IB=10mA VCE=6V, IC=10mA VCB=6V, IE=0, f=1MHz VCE=6V, IC=0.5mA f=1KHz, Thermal Characteristics TC=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Ambient hFE Classification & Marking Classification 70 ~ 140 Marking Y 120 ~ 240 Marking 2 1 SOT-623F Base Emitter Collector Value 60 50 5 150 100 150 -55 ~ 150 Units V mA mW °C °C Min. 60 50 5 Typ. Max. Units V µA µA V MHz pF dB Max. 1250 G 200 ~ 400 Units °C/W L 350 ~ 700 2004 Fairchild Semiconductor Corporation FJZ945 Typical Characteristics

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FJZ945

FJZ945

Audio Frequency Amplifier & High Frequency OSC.
• Complement to FJZ733
• Collector-Base Voltage VCBO=60V
• High Current Gain Bandwidth Product fT=300MHz Typ.

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO ICBO IEBO hFE VCE sat fT Cob NF

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure

IC=100µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=40V, IE=0 VEB=3V, IC=0 VCE=6V, IC=1.0mA IC=100mA, IB=10mA VCE=6V, IC=10mA VCB=6V, IE=0, f=1MHz VCE=6V, IC=0.5mA f=1KHz,

Thermal Characteristics TC=25°C unless otherwise noted

Parameter

Thermal Resistance, Junction to Ambient
hFE Classification & Marking

Classification
70 ~ 140

Marking

Y 120 ~ 240

Marking
2 1 SOT-623F Base Emitter Collector

Value 60 50 5 150 100 150
-55 ~ 150

Units V mA
mW °C °C

Min. 60 50 5

Typ.

Max.

Units V µA µA

V MHz pF dB

Max. 1250

G 200 ~ 400

Units °C/W

L 350 ~ 700
2004 Fairchild Semiconductor Corporation

FJZ945

Typical Characteristics

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Datasheet ID: FJZ945GTF 514863