EA5830

EA5830 Datasheet

Part	Datasheet
EA5830	EA5830 (pdf)

Related Parts	Information
ACT5830QJ1CF-T	ACT5830QJ1CF-T

PDF Datasheet Preview
Twelve Channel PMU for Mobile Phones • Multiple Patents Pending • 350mA, PWM Step-Down DC/DC Converter • Eight I2C-Programmable, Low Noise LDOs − Three Optimized for RF Section Power − Five Optimized for BB Section Power • Li+ Battery Charger with Integrated MOSFET − Charger Current Monitor Output VICHG − Charger ON/OFF Control Pin • Two N-channel Open Drain Switches • Minimal External Components • I2CTM Serial Interface − Configurable Operating Modes • AC-OK and RESET Outputs • 5x5mm, Thin-QFN TQFN55-40 Package − Only 0.75mm Height − RoHS Compliant • GSM or CDMA Mobile Phones The patent-pending ACT5830 is a complete, integrated power management solution that is ideal for mid-high and mobile phones. This device integrates a linear Li+ battery charger with an internal power MOSFET, a high efficiency 350mA DC/DC converter, eight low dropout linear regulators, a reset output, and two N-Channel open drain switches, and an I2C Serial Interface to achieve flexibility for programming LDO outputs and individual on/off control. The charger is a complete, thermally-regulated, stand-alone single-cell linear Li+ battery charger that incorporates an internal power MOSFET for constant-current/constant-voltage control. The charger includes a variety of value-added features, and it is programmable via the I2C-Interface to control charging current, termination voltage, along with safety features and operation modes. The ACT5830 is available in a compact 5mm x 5mm 40-pin Thin-QFN package that is just 0.75mm thin. SYSTEM BLOCK DIAGRAM Pb-free Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. Copyright 2013 Active-Semi, Inc. ACT5830 TABLE OF CONTENTS GENERAL INFORMATION P. 01 Functional Block Diagram p. 03 Ordering Information p. 04 Pin Configuration p. 04 Pin Descriptions p. 05 Absolute Maximum Ratings p. 07 SYSTEM MANAGEMENT P. 08 Electrical p. 08 I2C Interface Electrical p. 09 System Management Register Descriptions p. 10 Functional p. 11 STEP-DOWN DC/DC CONVERTER P. 13 Electrical Characteristics p. 13 Register Descriptions p. 14 Typical Performance Characteristics p. 16 Functional Description p. 17 LOW-DROPOUT LINEAR REGULATORS P. 19 Register Descriptions p. 19 Typical Performance Characteristics p. 23 Functional Description p. 24 p. 25 p. 26 p. 27 p. 28 p. 29 p. 30 p. 31 p. 32 SINGLE-CELL Li+ BATTERY CHARGER CHGR P. 33 Electrical Characteristics p. 33 Li+ Battery Charger Register p. 35 Typical Performance Characteristics p. 37 Functional p. 38 PACKAGE INFORMATION P. 41 Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. Copyright 2013 Active-Semi, Inc. ACT5830 FUNCTIONAL BLOCK DIAGRAM AC Adaptor 4.3V to 6V or USB CHG_IN BODY AND VSYS CONTROL ACT5830 BAT Li+ Battery + nENCHG 4.0V nACOK VICHG nRST OUT1 VINUVLO Charge Control OUT1 REF PWR_HOLD nON HF_PWR PWR_ON SDA SCL IN1 IN2 TCXO_EN RX_EN TX_EN ODI1 OD1 ODI2 OD2 Reset Voltage Reference System Control To LDOs To LDOs Open-Drain #1 Open-Drain #2 CURRENT SENSE VOLTAGE SENSE ORDERING INFORMATIONcd VBUCK VLDO1 VLDO2 VLDO3 VLDO4 VLDO5 VLDO6 VLDO7 VLDO8 ICHARGER PACKAGE PINS TEMPERATURE RANGE ACT5830QJ1CF-T 1.2V 3.0V 1.8V 3.0V 3.0V 3.0V 3.0V 1.8V 3.3V 0.45A TQFN55-40 -40°C to +85°C ACT5830QJ182-T 1.2V 3.0V 1.8V 3.0V 3.0V 2.85V 2.85V 1.8V 1.5V 0.45A TQFN55-40 -40°C to +85°C c Output voltage options detailed in this table represent standard voltage options, and are available for samples or production orders. Additional output voltage options, as detailed in the Output Voltage Codes table, are available for production subject to minimum order quantities. Contact Active-Semi for more information regarding semi-custom output voltage combinations. d All Active-Semi components are RoHS Compliant and with Pb-free plating unless specified differently. The term Pb-free means semiconductor products that are in compliance with current RoHS Restriction of Hazardous Substances standards. PIN CONFIGURATION NC VP SW GP NC nACOK nENCHG BATID VICHG CHG_IN BAT REF nRST IN2 OUT4 OUT6 OUT8 OUT2 TX_EN ACT5830 EP VBUCK HF_PWR G nON IN1 OUT3 OUT5 OUT7 OUT1 RX_EN NC PWR_HOLD PWR_ON ODI2 OD2 OD1 ODI1 SCL SDA TCXO_EN 5x5mm QFN TQFN55-40 Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. Copyright 2013 Active-Semi, Inc. ACT5830 PIN DESCRIPTIONS PIN NAME CHG_IN Battery Charge Supply Input. Connect a 1µF ceramic capacitor from CHG_IN to G. Battery Charger Output. Connect this pin directly to the battery anode + terminal , and to IN1 and IN2 pins. Bypass with 10µF ceramic capacitor to G. Reference Noise Bypass. Connect a 0.01µF ceramic capacitor from REF to G. This pin is discharged to G in shutdown. nRST Active Low Reset Output. nRST asserts low for the reset timeout period of 65ms whenever the ACT5830 is first enabled. This output is internally connected to OUT1 via a pull-up resistor. Input supply to LDO2, LDO4, LDO6, and LDO8. Connect to BAT and IN1. OUT4 c VNOM refers to the nominal output voltage level for VREG as defined by the Ordering Information section. Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. - 13 - Copyright 2013 Active-Semi, Inc. STEP-DOWN DC/DC CONVERTER REGISTER DESCRIPTIONS Note See Table 1 for default register settings. Table 2 Control Register Map ADDRESS VRANGE R Read-Only bits. Default Values May Vary. Table 3 Control Register Bit Descriptions DATA VSET MODE ADDRESS NAME VSET VRANGE MODE 15h 16h BIT ACCESS FUNCTION [5:0] REG Output Voltage Selection REG Voltage Range Selection Mode Selection [7:1] [7:0] REG Enable [7:3] REG Power-OK See Table 4 Min VOUT = 1.1V Min VOUT = 1.25V READ ONLY PWM/PFM Forced PWM READ ONLY READ ONLY REG Disable c VNOM refers to the nominal output voltage level for LDO1 as defined by the Ordering Information section. 2 Dropout Voltage is defined as the different voltage between input and output when the output voltage drops 100mV below the regulation voltage at 1V differential voltage. Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. - 25 - Copyright 2013 Active-Semi, Inc. ELECTRICAL CHARACTERISTICS VIN2 = 3.6V, COUT2 = 1µF, TA = 25°C unless otherwise specified. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Input Supply Range Input Under Voltage Lockout UVLO Hysteresis Output Voltage Accuracy Line Regulation Error Load Regulation Error Power Supply Rejection Ratio Supply Current per Output Dropout Voltage2 Output Current VIN2 Input Rising VIN2 Input Falling TA = 25°C TA = -40°C to 85°C VIN2 = Max VNOM1 + 0.5V, 3.1V to 5.5V IOUT2 = 1mA to 300mA f = 1kHz, IOUT2 = 300mA, COUT2 = 1µF f = 10kHz, IOUT2 = 300mA, COUT2 = 1µF LDO2 Enabled LDO2 Disabled IOUT2 = 150mA 3 0 60 50 20 0 100 mV/V %/mA 200 mV 300 mA Current Limit VOUT2 = 95% of Regulation Voltage Current Limit Short Circuit Foldback VOUT2 = 0V x ILIM Internal Soft-Start Power Good Flag High Threshold Output Noise Stable COUT2 VOUT2, Hysteresis = -1% COUT2 = 10µF, f = 10Hz to 100kHz µVRMS c VNOM refers to the nominal output voltage level for LDO2 as defined by the Ordering Information section. 2 Dropout Voltage is defined as the different voltage between input and output when the output voltage drops 100mV below the regulation voltage at 1V differential voltage. Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. - 26 - Copyright 2013 Active-Semi, Inc. ELECTRICAL CHARACTERISTICS VIN1 = 3.6V, COUT3 = 1µF, TA = 25°C unless otherwise specified. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Input Supply Range Input Under Voltage Lockout UVLO Hysteresis Output Voltage Accuracy Line Regulation Error Load Regulation Error Power Supply Rejection Ratio Supply Current per Output Dropout Voltage2 Output Current VIN1 Input Rising VIN1 Input Falling TA = 25°C TA = -40°C to 85°C VIN3 = Max VNOM1 + 0.5V, 3.1V to 5.5V IOUT3 = 1mA to 100mA f = 1kHz, IOUT3 = 100mA, COUT3 = 1µF f = 10kHz, IOUT3 = 100mA, COUT3 = 1µF LDO3 Enabled LDO3 Disabled IOUT3 = 50mA 3 0 60 50 40 0 100 mV/V %/mA 200 mV 100 mA Current Limit VOUT3 = 95% of Regulation Voltage Current Limit Short Circuit Foldback VOUT3 = 0V x ILIM Internal Soft-Start Power Good Flag High Threshold Output Noise Stable COUT3 VOUT3, Hysteresis = -1% COUT3 = 10µF, f = 10Hz to 100kHz µVRMS c VNOM refers to the nominal output voltage level for LDO3 as defined by the Ordering Information section. 2 Dropout Voltage is defined as the different voltage between input and output when the output voltage drops 100mV below the regulation voltage at 1V differential voltage. Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. - 27 - Copyright 2013 Active-Semi, Inc. ELECTRICAL CHARACTERISTICS VIN2 = 3.6V, COUT4 = 1µF, TA = 25°C unless otherwise specified. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Input Supply Range Input Under Voltage Lockout UVLO Hysteresis Output Voltage Accuracy Line Regulation Error Load Regulation Error Power Supply Rejection Ratio Supply Current per Output Dropout Voltage2 Output Current VIN2 Input Rising VIN2 Input Falling TA = 25°C TA = -40°C to 85°C VIN4 = Max VNOM1 + 0.5V, 3.1V to 5.5V IOUT4 = 1mA to 100mA f = 1kHz, IOUT4 = 100mA, COUT4 = 1µF f = 10kHz, IOUT4 = 100mA, COUT4 = 1µF LDO4 Enabled LDO4 Disabled IOUT4 = 50mA 3 0 70 60 40 0 100 mV/V %/mA 200 mV 100 mA Current Limit VOUT4 = 95% of Regulation Voltage Current Limit Short Circuit Foldback VOUT4 = 0V x ILIM Internal Soft-Start Power Good Flag High Threshold Output Noise Stable COUT4 VOUT4, Hysteresis = -1% COUT4 = 10µF, f = 10Hz to 100kHz µVRMS c VNOM refers to the nominal output voltage level for LDO4 as defined by the Ordering Information section. 2 Dropout Voltage is defined as the different voltage between input and output when the output voltage drops 100mV below the regulation voltage at 1V differential voltage. Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. - 28 - Copyright 2013 Active-Semi, Inc. ELECTRICAL CHARACTERISTICS VIN1 = 3.6V, COUT5 = 1µF, TA = 25°C unless otherwise specified. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Input Supply Range Input Under Voltage Lockout UVLO Hysteresis Output Voltage Accuracy Line Regulation Error Load Regulation Error Power Supply Rejection Ratio Supply Current per Output Dropout Voltage2 Output Current VIN1 Input Rising VIN1 Input Falling TA = 25°C TA = -40°C to 85°C VIN5 = Max VNOM1 + 0.5V, 3.1V to 5.5V IOUT5 = 1mA to 150mA f = 1kHz, IOUT5 = 150mA, COUT5 = 1µF f = 10kHz, IOUT5 = 150mA, COUT5 = 1µF LDO5 Enabled LDO5 Disabled IOUT5 = 80mA 3 0 70 60 40 0 100 mV/V %/mA 200 mV 150 mA Current Limit VOUT5 = 95% of Regulation Voltage Current Limit Short Circuit Foldback VOUT5 = 0V x ILIM Internal Soft-Start Power Good Flag High Threshold Output Noise Stable COUT5 VOUT5, Hysteresis = -1% COUT5 = 10µF, f = 10Hz to 100kHz µVRMS c VNOM refers to the nominal output voltage level for LDO5 as defined by the Ordering Information section. 2 Dropout Voltage is defined as the different voltage between input and output when the output voltage drops 100mV below the regulation voltage at 1V differential voltage. Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. - 29 - Copyright 2013 Active-Semi, Inc. ELECTRICAL CHARACTERISTICS VIN2 = 3.6V, COUT6 = 1µF, TA = 25°C unless otherwise specified. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Input Supply Range Input Under Voltage Lockout UVLO Hysteresis Output Voltage Accuracy Line Regulation Error Load Regulation Error Power Supply Rejection Ratio Supply Current per Output Dropout Voltage2 Output Current VIN2 Input Rising VIN2 Input Falling TA = 25°C TA = -40°C to 85°C VIN6 = Max VNOM1 + 0.5V, 3.1V to 5.5V IOUT6 = 1mA to 150mA f = 1kHz, IOUT6 = 150mA, COUT6 = 1µF f = 10kHz, IOUT6 = 150mA, COUT6 = 1µF LDO6 Enabled LDO6 Disabled IOUT6 = 80mA 3 0 70 60 40 0 100 mV/V %/mA 200 mV 150 mA Current Limit VOUT6 = 95% of Regulation Voltage Current Limit Short Circuit Foldback VOUT6 = 0V x ILIM Internal Soft-Start Power Good Flag High Threshold Output Noise Stable COUT6 VOUT6, Hysteresis = -1% COUT6 = 10µF, f = 10Hz to 100kHz µVRMS c VNOM refers to the nominal output voltage level for LDO6 as defined by the Ordering Information section. 2 Dropout Voltage is defined as the different voltage between input and output when the output voltage drops 100mV below the regulation voltage at 1V differential voltage. Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. - 30 - Copyright 2013 Active-Semi, Inc. ELECTRICAL CHARACTERISTICS VIN1 = 3.6V, COUT7 = 1µF, TA = 25°C unless otherwise specified. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Input Supply Range Input Under Voltage Lockout VIN1 Input Rising UVLO Hysteresis VIN1 Input Falling Output Voltage Accuracy TA = 25°C VNOM < 1.3V, IOUT = 10mA VNOM 1.3V, IOUT = 10mA VNOM < 1.3V, IOUT = 10mA TA = -40°C to 85°C VNOM 1.3V, IOUT = 10mA Line Regulation Error VIN7 = Max VNOM1 + 0.5V, 3.1V to 5.5V Load Regulation Error IOUT7 = 1mA to 250mA f = 1kHz, IOUT7 = 250mA, COUT7 = 1µF Power Supply Rejection Ratio f = 10kHz, IOUT7 = 250mA, COUT7 = 1µF Supply Current per Output LDO7 Enabled LDO7 Disabled Dropout Voltage2 IOUT7 = 100mA Output Current 3 0 60 50 20 0 100 mV/V %/mA 200 mV 250 mA Current Limit Current Limit Short Circuit Foldback VOUT7 = 95% of Regulation Voltage VOUT7 = 0V x ILIM Internal Soft-Start Power Good Flag High Threshold c VNOM refers to the nominal output voltage level for LDO7 as defined by the Ordering Information section. 2 Dropout Voltage is defined as the different voltage between input and output when the output voltage drops 100mV below the regulation voltage at 1V differential voltage. Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. - 31 - Copyright 2013 Active-Semi, Inc. ELECTRICAL CHARACTERISTICS VIN2 = 3.6V, COUT8 = 1µF, TA = 25°C unless otherwise specified. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Input Supply Range Input Under Voltage Lockout UVLO Hysteresis Output Voltage Accuracy Line Regulation Error Load Regulation Error Power Supply Rejection Ratio Supply Current per Output Dropout Voltage2 Output Current VIN2 Input Rising VIN2 Input Falling TA = 25°C TA = -40°C to 85°C VIN8 = Max VNOM1 + 0.5V, 3.1V to 5.5V IOUT8 = 1mA to 250mA f = 1kHz, IOUT8 = 250mA, COUT8 = 1µF f = 10kHz, IOUT8 = 250mA, COUT8 = 1µF LDO8 Enabled LDO8 Disabled IOUT8 = 100mA 3 0 60 50 20 0 100 mV/V %/mA 200 mV 250 mA Current Limit VOUT8 = 95% of Regulation Voltage Current Limit Short Circuit Foldback VOUT8 = 0V x ILIM Internal Soft-Start Power Good Flag High Threshold Output Noise Stable COUT8 VOUT8, Hysteresis = -1% COUT8 = 10µF, f = 10Hz to 100kHz µVRMS c VNOM refers to the nominal output voltage level for LDO8 as defined by the Ordering Information section. 2 Dropout Voltage is defined as the different voltage between input and output when the output voltage drops 100mV below the regulation voltage at 1V differential voltage. Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. - 32 - Copyright 2013 Active-Semi, Inc. SINGLE-CELL Li+ BATTERY CHARGER CHGR ELECTRICAL CHARACTERISTICS VCHG_IN = 5V, VBAT = 3.6V, VSET[ ] = [0101], ISET[ ] = [0101], TA = 25°C, unless otherwise specified. PARAMETER CHG_IN Operating Range UVLO Threshold UVLO Hysteresis Battery Termination Voltage Line Regulation PMOS On Resistance Charge Current VICHG Voltage Precondition Charge Current Precondition Threshold Voltage Precondition Threshold Hysteresis End-of-Charge Current Threshold End-of-Charge Qualification Period Charge Restart Threshold BATID High Input Voltage BATID Low Input Voltage BATID Leakage Current Thermal Regulation Threshold BAT Reserve Leakage Current CHG_IN Supply Current Precondition Timeout Period Total Charging Timeout Period TEST CONDITIONS CHG_IN Voltage Rising CHG_IN Voltage Falling VCHG_IN = 4.5V to 5.5V, IBAT = 10mA VBAT = 3.8V VVICHG /IBAT VBAT = 2.8V VBAT Voltage Rising VBAT Voltage Falling VBAT = 4.1V VSET[ ] - VBAT, VBAT Falling VBATID Voltage Rising VBATID Voltage Falling VCHG_IN = 4.5V SLEEP, SUSPEND, or TIMER-FAULT state VnENCHG > 1.4V SLEEP, SUSPEND, or TIMER-FAULT state PRECONDITION, FAST-CHARGE, or TOP-OFF state TIMOSET[ ] = [00] TIMOSET[ ] = [01] TIMOSET[ ] = [10] TIMOSET[ ] = [11] TIMOSET[ ] = [00] TIMOSET[ ] = [01] TIMOSET[ ] = [10] TIMOSET[ ] = [11] 450 35 4 500 50 150 50 32 200 105 65 200 MAX UNIT 550 mA mV/mA INFINITE INFINITE Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. - 33 - Copyright 2013 Active-Semi, Inc. Figure 3 Battery Charger Algorithm SINGLE-CELL Li+ BATTERY CHARGER CHGR Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. - 34 - Copyright 2013 Active-Semi, Inc. SINGLE-CELL Li+ BATTERY CHARGER CHGR Li+ BATTERY CHARGER REGISTER DESCRIPTIONS Note See Table 1 for default register settings. Table 8 Battery Charger CHGR Control Register Map DATA ADDRESS

PDF Datasheet Preview

Twelve Channel PMU for Mobile Phones
• Multiple Patents Pending
• 350mA, PWM Step-Down DC/DC Converter
• Eight I2C-Programmable, Low Noise LDOs
− Three Optimized for RF Section Power − Five Optimized for BB Section Power
• Li+ Battery Charger with Integrated MOSFET − Charger Current Monitor Output VICHG − Charger ON/OFF Control Pin
• Two N-channel Open Drain Switches
• Minimal External Components
• I2CTM Serial Interface
− Configurable Operating Modes
• AC-OK and RESET Outputs
• 5x5mm, Thin-QFN TQFN55-40 Package − Only 0.75mm Height − RoHS Compliant
• GSM or CDMA Mobile Phones

The patent-pending ACT5830 is a complete, integrated power management solution that is ideal for mid-high and mobile phones. This device integrates a linear Li+ battery charger with an internal power MOSFET, a high efficiency 350mA DC/DC converter, eight low dropout linear regulators, a reset output, and two N-Channel open drain switches, and an I2C Serial Interface to achieve flexibility for programming LDO outputs and individual on/off control.

The charger is a complete, thermally-regulated, stand-alone single-cell linear Li+ battery charger that incorporates an internal power MOSFET for constant-current/constant-voltage control. The charger includes a variety of value-added features, and it is programmable via the I2C-Interface to control charging current, termination voltage, along with safety features and operation modes.

The ACT5830 is available in a compact 5mm x 5mm 40-pin Thin-QFN package that is just 0.75mm thin.

SYSTEM BLOCK DIAGRAM

Pb-free

Innovative PowerTM

ActivePMUTM is a trademark of Active-Semi.

I2CTM is a trademark of NXP.

Copyright 2013 Active-Semi, Inc.

ACT5830

TABLE OF CONTENTS

GENERAL INFORMATION P. 01
Functional Block Diagram p. 03 Ordering Information p. 04 Pin Configuration p. 04 Pin Descriptions p. 05 Absolute Maximum Ratings p. 07

SYSTEM MANAGEMENT P. 08

Electrical p. 08 I2C Interface Electrical p. 09 System Management Register Descriptions p. 10 Functional p. 11

STEP-DOWN DC/DC CONVERTER P. 13

Electrical Characteristics p. 13 Register Descriptions p. 14 Typical Performance Characteristics p. 16 Functional Description p. 17

LOW-DROPOUT LINEAR REGULATORS P. 19

Register Descriptions p. 19 Typical Performance Characteristics p. 23 Functional Description p. 24 p. 25 p. 26 p. 27 p. 28 p. 29 p. 30 p. 31 p. 32

SINGLE-CELL Li+ BATTERY CHARGER CHGR P. 33

Electrical Characteristics p. 33 Li+ Battery Charger Register p. 35 Typical Performance Characteristics p. 37 Functional p. 38

PACKAGE INFORMATION P. 41

Innovative PowerTM

ActivePMUTM is a trademark of Active-Semi.

I2CTM is a trademark of NXP.

Copyright 2013 Active-Semi, Inc.

ACT5830

FUNCTIONAL BLOCK DIAGRAM

AC Adaptor 4.3V to 6V or USB

CHG_IN

BODY AND VSYS

CONTROL

ACT5830

BAT Li+ Battery +
nENCHG
4.0V
nACOK

VICHG nRST

OUT1

VINUVLO

Charge Control

OUT1

REF PWR_HOLD
nON HF_PWR PWR_ON

SDA SCL IN1 IN2 TCXO_EN RX_EN TX_EN ODI1 OD1

ODI2 OD2

Reset Voltage Reference

System Control

To LDOs To LDOs

Open-Drain #1

Open-Drain #2

CURRENT SENSE

VOLTAGE SENSE
ORDERING INFORMATIONcd

VBUCK

VLDO1

VLDO2

VLDO3

VLDO4

VLDO5

VLDO6

VLDO7

VLDO8

ICHARGER

PACKAGE

PINS

TEMPERATURE RANGE

ACT5830QJ1CF-T 1.2V 3.0V 1.8V 3.0V 3.0V 3.0V 3.0V 1.8V 3.3V 0.45A TQFN55-40 -40°C to +85°C

ACT5830QJ182-T 1.2V 3.0V 1.8V 3.0V 3.0V 2.85V 2.85V 1.8V 1.5V 0.45A TQFN55-40 -40°C to +85°C
c Output voltage options detailed in this table represent standard voltage options, and are available for samples or production orders. Additional output voltage options, as detailed in the Output Voltage Codes table, are available for production subject to minimum order quantities. Contact Active-Semi for more information regarding semi-custom output voltage combinations.
d All Active-Semi components are RoHS Compliant and with Pb-free plating unless specified differently. The term Pb-free means semiconductor products that are in compliance with current RoHS Restriction of Hazardous Substances standards.

PIN CONFIGURATION

NC VP SW GP NC nACOK nENCHG BATID VICHG

CHG_IN BAT REF
nRST IN2

OUT4 OUT6 OUT8 OUT2 TX_EN

ACT5830 EP

VBUCK HF_PWR G nON IN1 OUT3 OUT5 OUT7 OUT1 RX_EN

NC PWR_HOLD PWR_ON ODI2 OD2 OD1 ODI1 SCL SDA TCXO_EN
5x5mm QFN TQFN55-40

Innovative PowerTM

ActivePMUTM is a trademark of Active-Semi.

I2CTM is a trademark of NXP.

Copyright 2013 Active-Semi, Inc.

ACT5830

PIN DESCRIPTIONS

PIN NAME

CHG_IN Battery Charge Supply Input. Connect a 1µF ceramic capacitor from CHG_IN to G.

Battery Charger Output. Connect this pin directly to the battery anode + terminal , and to IN1 and IN2 pins. Bypass with 10µF ceramic capacitor to G.

Reference Noise Bypass. Connect a 0.01µF ceramic capacitor from REF to G. This pin is discharged to G in shutdown.
nRST

Active Low Reset Output. nRST asserts low for the reset timeout period of 65ms whenever the ACT5830 is first enabled. This output is internally connected to OUT1 via a pull-up resistor.

Input supply to LDO2, LDO4, LDO6, and LDO8. Connect to BAT and IN1.

OUT4
c VNOM refers to the nominal output voltage level for VREG as defined by the Ordering Information section.

Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP.
- 13 -

Copyright 2013 Active-Semi, Inc.

STEP-DOWN DC/DC CONVERTER

REGISTER DESCRIPTIONS

Note See Table 1 for default register settings.

Table 2 Control Register Map

ADDRESS

VRANGE

R Read-Only bits. Default Values May Vary.

Table 3 Control Register Bit Descriptions

DATA

VSET

MODE

ADDRESS

NAME

VSET

VRANGE

MODE
15h 16h

BIT ACCESS

FUNCTION
[5:0]

REG Output Voltage Selection

REG Voltage Range Selection

Mode Selection
[7:1]
[7:0]

REG Enable
[7:3]

REG Power-OK

See Table 4

Min VOUT = 1.1V

Min VOUT = 1.25V

READ ONLY

PWM/PFM

Forced PWM

READ ONLY

READ ONLY

REG Disable
c VNOM refers to the nominal output voltage level for LDO1 as defined by the Ordering Information section.
2 Dropout Voltage is defined as the different voltage between input and output when the output voltage drops 100mV below the regulation voltage at 1V differential voltage.

Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP.
- 25 -

Copyright 2013 Active-Semi, Inc.

ELECTRICAL CHARACTERISTICS

VIN2 = 3.6V, COUT2 = 1µF, TA = 25°C unless otherwise specified.

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

Input Supply Range

Input Under Voltage Lockout UVLO Hysteresis Output Voltage Accuracy Line Regulation Error Load Regulation Error Power Supply Rejection Ratio

Supply Current per Output Dropout Voltage2 Output Current

VIN2 Input Rising

VIN2 Input Falling

TA = 25°C

TA = -40°C to 85°C

VIN2 = Max VNOM1 + 0.5V, 3.1V to 5.5V

IOUT2 = 1mA to 300mA f = 1kHz, IOUT2 = 300mA, COUT2 = 1µF
f = 10kHz, IOUT2 = 300mA, COUT2 = 1µF LDO2 Enabled

LDO2 Disabled

IOUT2 = 150mA
3 0 60 50 20 0 100
mV/V
%/mA
200 mV 300 mA

Current Limit

VOUT2 = 95% of Regulation Voltage

Current Limit Short Circuit Foldback VOUT2 = 0V
x ILIM

Internal Soft-Start

Power Good Flag High Threshold Output Noise Stable COUT2

VOUT2, Hysteresis = -1% COUT2 = 10µF, f = 10Hz to 100kHz
µVRMS
c VNOM refers to the nominal output voltage level for LDO2 as defined by the Ordering Information section.
2 Dropout Voltage is defined as the different voltage between input and output when the output voltage drops 100mV below the regulation voltage at 1V differential voltage.

Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP.
- 26 -

Copyright 2013 Active-Semi, Inc.

ELECTRICAL CHARACTERISTICS

VIN1 = 3.6V, COUT3 = 1µF, TA = 25°C unless otherwise specified.

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

Input Supply Range

Input Under Voltage Lockout UVLO Hysteresis Output Voltage Accuracy Line Regulation Error Load Regulation Error Power Supply Rejection Ratio

Supply Current per Output Dropout Voltage2 Output Current

VIN1 Input Rising

VIN1 Input Falling

TA = 25°C

TA = -40°C to 85°C

VIN3 = Max VNOM1 + 0.5V, 3.1V to 5.5V

IOUT3 = 1mA to 100mA
f = 1kHz, IOUT3 = 100mA, COUT3 = 1µF
f = 10kHz, IOUT3 = 100mA, COUT3 = 1µF

LDO3 Enabled

LDO3 Disabled

IOUT3 = 50mA
3 0 60 50 40 0 100
mV/V
%/mA
200 mV 100 mA

Current Limit

VOUT3 = 95% of Regulation Voltage

Current Limit Short Circuit Foldback VOUT3 = 0V
x ILIM

Internal Soft-Start

Power Good Flag High Threshold Output Noise Stable COUT3

VOUT3, Hysteresis = -1% COUT3 = 10µF, f = 10Hz to 100kHz
µVRMS
c VNOM refers to the nominal output voltage level for LDO3 as defined by the Ordering Information section.
2 Dropout Voltage is defined as the different voltage between input and output when the output voltage drops 100mV below the regulation voltage at 1V differential voltage.

Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP.
- 27 -

Copyright 2013 Active-Semi, Inc.

ELECTRICAL CHARACTERISTICS

VIN2 = 3.6V, COUT4 = 1µF, TA = 25°C unless otherwise specified.

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

Input Supply Range

Input Under Voltage Lockout UVLO Hysteresis Output Voltage Accuracy Line Regulation Error Load Regulation Error Power Supply Rejection Ratio

Supply Current per Output Dropout Voltage2 Output Current

VIN2 Input Rising

VIN2 Input Falling

TA = 25°C

TA = -40°C to 85°C

VIN4 = Max VNOM1 + 0.5V, 3.1V to 5.5V

IOUT4 = 1mA to 100mA f = 1kHz, IOUT4 = 100mA, COUT4 = 1µF
f = 10kHz, IOUT4 = 100mA, COUT4 = 1µF LDO4 Enabled

LDO4 Disabled

IOUT4 = 50mA
3 0 70 60 40 0 100
mV/V
%/mA
200 mV 100 mA

Current Limit

VOUT4 = 95% of Regulation Voltage

Current Limit Short Circuit Foldback VOUT4 = 0V
x ILIM

Internal Soft-Start

Power Good Flag High Threshold Output Noise Stable COUT4

VOUT4, Hysteresis = -1% COUT4 = 10µF, f = 10Hz to 100kHz
µVRMS
c VNOM refers to the nominal output voltage level for LDO4 as defined by the Ordering Information section.
2 Dropout Voltage is defined as the different voltage between input and output when the output voltage drops 100mV below the regulation voltage at 1V differential voltage.

Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP.
- 28 -

Copyright 2013 Active-Semi, Inc.

ELECTRICAL CHARACTERISTICS

VIN1 = 3.6V, COUT5 = 1µF, TA = 25°C unless otherwise specified.

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

Input Supply Range

Input Under Voltage Lockout UVLO Hysteresis Output Voltage Accuracy Line Regulation Error Load Regulation Error Power Supply Rejection Ratio

Supply Current per Output Dropout Voltage2 Output Current

VIN1 Input Rising

VIN1 Input Falling

TA = 25°C

TA = -40°C to 85°C

VIN5 = Max VNOM1 + 0.5V, 3.1V to 5.5V

IOUT5 = 1mA to 150mA f = 1kHz, IOUT5 = 150mA, COUT5 = 1µF
f = 10kHz, IOUT5 = 150mA, COUT5 = 1µF LDO5 Enabled

LDO5 Disabled

IOUT5 = 80mA
3 0 70 60 40 0 100
mV/V
%/mA
200 mV 150 mA

Current Limit

VOUT5 = 95% of Regulation Voltage

Current Limit Short Circuit Foldback VOUT5 = 0V
x ILIM

Internal Soft-Start

Power Good Flag High Threshold Output Noise Stable COUT5

VOUT5, Hysteresis = -1% COUT5 = 10µF, f = 10Hz to 100kHz
µVRMS
c VNOM refers to the nominal output voltage level for LDO5 as defined by the Ordering Information section.
2 Dropout Voltage is defined as the different voltage between input and output when the output voltage drops 100mV below the regulation voltage at 1V differential voltage.

Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP.
- 29 -

Copyright 2013 Active-Semi, Inc.

ELECTRICAL CHARACTERISTICS

VIN2 = 3.6V, COUT6 = 1µF, TA = 25°C unless otherwise specified.

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

Input Supply Range

Input Under Voltage Lockout UVLO Hysteresis Output Voltage Accuracy Line Regulation Error Load Regulation Error Power Supply Rejection Ratio

Supply Current per Output Dropout Voltage2 Output Current

VIN2 Input Rising

VIN2 Input Falling

TA = 25°C

TA = -40°C to 85°C

VIN6 = Max VNOM1 + 0.5V, 3.1V to 5.5V

IOUT6 = 1mA to 150mA f = 1kHz, IOUT6 = 150mA, COUT6 = 1µF
f = 10kHz, IOUT6 = 150mA, COUT6 = 1µF LDO6 Enabled

LDO6 Disabled

IOUT6 = 80mA
3 0 70 60 40 0 100
mV/V
%/mA
200 mV 150 mA

Current Limit

VOUT6 = 95% of Regulation Voltage

Current Limit Short Circuit Foldback VOUT6 = 0V
x ILIM

Internal Soft-Start

Power Good Flag High Threshold Output Noise Stable COUT6

VOUT6, Hysteresis = -1% COUT6 = 10µF, f = 10Hz to 100kHz
µVRMS
c VNOM refers to the nominal output voltage level for LDO6 as defined by the Ordering Information section.
2 Dropout Voltage is defined as the different voltage between input and output when the output voltage drops 100mV below the regulation voltage at 1V differential voltage.

Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP.
- 30 -

Copyright 2013 Active-Semi, Inc.

ELECTRICAL CHARACTERISTICS

VIN1 = 3.6V, COUT7 = 1µF, TA = 25°C unless otherwise specified.

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

Input Supply Range

Input Under Voltage Lockout VIN1 Input Rising

UVLO Hysteresis

VIN1 Input Falling

Output Voltage Accuracy

TA = 25°C

VNOM < 1.3V, IOUT = 10mA VNOM 1.3V, IOUT = 10mA

VNOM < 1.3V, IOUT = 10mA

TA = -40°C to 85°C

VNOM 1.3V, IOUT = 10mA

Line Regulation Error

VIN7 = Max VNOM1 + 0.5V, 3.1V to 5.5V

Load Regulation Error

IOUT7 = 1mA to 250mA
f = 1kHz, IOUT7 = 250mA, COUT7 = 1µF Power Supply Rejection Ratio
f = 10kHz, IOUT7 = 250mA, COUT7 = 1µF

Supply Current per Output

LDO7 Enabled LDO7 Disabled

Dropout Voltage2

IOUT7 = 100mA

Output Current
3 0 60 50 20 0 100
mV/V
%/mA
200 mV 250 mA

Current Limit

Current Limit Short Circuit Foldback

VOUT7 = 95% of Regulation Voltage VOUT7 = 0V
x ILIM

Internal Soft-Start

Power Good Flag High Threshold
c VNOM refers to the nominal output voltage level for LDO7 as defined by the Ordering Information section.
2 Dropout Voltage is defined as the different voltage between input and output when the output voltage drops 100mV below the regulation voltage at 1V differential voltage.

Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP.
- 31 -

Copyright 2013 Active-Semi, Inc.

ELECTRICAL CHARACTERISTICS

VIN2 = 3.6V, COUT8 = 1µF, TA = 25°C unless otherwise specified.

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

Input Supply Range

Input Under Voltage Lockout UVLO Hysteresis Output Voltage Accuracy Line Regulation Error Load Regulation Error Power Supply Rejection Ratio

Supply Current per Output Dropout Voltage2 Output Current

VIN2 Input Rising

VIN2 Input Falling

TA = 25°C

TA = -40°C to 85°C

VIN8 = Max VNOM1 + 0.5V, 3.1V to 5.5V

IOUT8 = 1mA to 250mA f = 1kHz, IOUT8 = 250mA, COUT8 = 1µF
f = 10kHz, IOUT8 = 250mA, COUT8 = 1µF LDO8 Enabled

LDO8 Disabled

IOUT8 = 100mA
3 0 60 50 20 0 100
mV/V
%/mA
200 mV 250 mA

Current Limit

VOUT8 = 95% of Regulation Voltage

Current Limit Short Circuit Foldback VOUT8 = 0V
x ILIM

Internal Soft-Start

Power Good Flag High Threshold Output Noise Stable COUT8

VOUT8, Hysteresis = -1% COUT8 = 10µF, f = 10Hz to 100kHz
µVRMS
c VNOM refers to the nominal output voltage level for LDO8 as defined by the Ordering Information section.
2 Dropout Voltage is defined as the different voltage between input and output when the output voltage drops 100mV below the regulation voltage at 1V differential voltage.

Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP.
- 32 -

Copyright 2013 Active-Semi, Inc.

SINGLE-CELL Li+ BATTERY CHARGER CHGR

ELECTRICAL CHARACTERISTICS

VCHG_IN = 5V, VBAT = 3.6V, VSET[ ] = [0101], ISET[ ] = [0101], TA = 25°C, unless otherwise specified.

PARAMETER

CHG_IN Operating Range UVLO Threshold UVLO Hysteresis Battery Termination Voltage Line Regulation PMOS On Resistance Charge Current VICHG Voltage Precondition Charge Current Precondition Threshold Voltage Precondition Threshold Hysteresis End-of-Charge Current Threshold End-of-Charge Qualification Period Charge Restart Threshold BATID High Input Voltage BATID Low Input Voltage BATID Leakage Current Thermal Regulation Threshold BAT Reserve Leakage Current

CHG_IN Supply Current

Precondition Timeout Period

Total Charging Timeout Period

TEST CONDITIONS

CHG_IN Voltage Rising CHG_IN Voltage Falling

VCHG_IN = 4.5V to 5.5V, IBAT = 10mA

VBAT = 3.8V VVICHG /IBAT VBAT = 2.8V VBAT Voltage Rising VBAT Voltage Falling VBAT = 4.1V

VSET[ ] - VBAT, VBAT Falling VBATID Voltage Rising VBATID Voltage Falling VCHG_IN = 4.5V

SLEEP, SUSPEND, or TIMER-FAULT state VnENCHG > 1.4V SLEEP, SUSPEND, or TIMER-FAULT state PRECONDITION, FAST-CHARGE, or TOP-OFF state TIMOSET[ ] = [00] TIMOSET[ ] = [01] TIMOSET[ ] = [10] TIMOSET[ ] = [11] TIMOSET[ ] = [00] TIMOSET[ ] = [01] TIMOSET[ ] = [10] TIMOSET[ ] = [11]
450 35
4 500 50 150 50 32 200
105 65 200

MAX UNIT
550 mA
mV/mA

INFINITE

INFINITE

Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP.
- 33 -

Copyright 2013 Active-Semi, Inc.

Figure 3 Battery Charger Algorithm

SINGLE-CELL Li+ BATTERY CHARGER CHGR

Innovative PowerTM ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP.
- 34 -

Copyright 2013 Active-Semi, Inc.

SINGLE-CELL Li+ BATTERY CHARGER CHGR

Li+ BATTERY CHARGER REGISTER DESCRIPTIONS

Note See Table 1 for default register settings.

Table 8 Battery Charger CHGR Control Register Map

DATA

ADDRESS

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Datasheet ID: EA5830 522490