IRL3102L

IRL3102L Datasheet

IRL3102

Part	Datasheet
IRL3102L	IRL3102L (pdf)

Related Parts	Information
IRL3102	IRL3102

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l Advanced Process Technology l Optimized for 4.5V-7.0V Gate Drive l Ideal for CPU Core DC-DC Converters l Fast Switching These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID TC = 25°C ID TC = 100°C IDM PD = 25°C VGS VGSM EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS 4.5V Continuous Drain Current, VGS 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Start Up Transient, tp = 100µs Single Pulse Avalanche Energy Avalanche Repetitive Avalanche Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Junction-to-Ambient PD- 9.1694A IRL3102 Power MOSFET VDSS = 20V RDS on = ID = 61A TO-220AB Max. 61 39 240 89 ± 10 14 220 35 -55 to + 150 300 1.6mm from case 10 lbf•in 1.1N•m Typ. Max. 62 Units W/°C mJ A mJ V/ns Units °C/W 11/18/97 IRL3102 Electrical Characteristics TJ = 25°C unless otherwise specified Parameter V BR DSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS on VGS th gfs Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS IGSS Qg Qgs Qgd td on tr td off tf Drain-to-Source Leakage Current Internal Drain Inductance Internal Source Inductance

PDF Datasheet Preview

l Advanced Process Technology l Optimized for 4.5V-7.0V Gate Drive l Ideal for CPU Core DC-DC Converters l Fast Switching

These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings

ID TC = 25°C ID TC = 100°C IDM PD = 25°C

VGS VGSM

EAS IAR EAR dv/dt TJ TSTG

Parameter Continuous Drain Current, VGS 4.5V Continuous Drain Current, VGS 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Start Up Transient, tp = 100µs Single Pulse Avalanche Energy Avalanche Repetitive Avalanche Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew

Thermal Resistance

Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Junction-to-Ambient

PD- 9.1694A

IRL3102

Power MOSFET

VDSS = 20V

RDS on =

ID = 61A

TO-220AB

Max. 61 39 240 89 ± 10 14
220 35 -55 to + 150
300 1.6mm from case 10 lbf•in 1.1N•m

Typ.

Max. 62

Units

W/°C
mJ A mJ V/ns

Units
°C/W
11/18/97

IRL3102

Electrical Characteristics TJ = 25°C unless otherwise specified

Parameter V BR DSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient

RDS on

VGS th gfs

Static Drain-to-Source On-Resistance

Gate Threshold Voltage Forward Transconductance

IDSS

IGSS

Qg Qgs Qgd td on tr td off tf

Drain-to-Source Leakage Current

Internal Drain Inductance

Internal Source Inductance

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Datasheet ID: IRL3102L 639089