IRL2203S
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IRL2203STRL (pdf) |
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IRL2203STRR |
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PD 9.1091A IRL2203S Power MOSFET l Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. Absolute Maximum Ratings ID TC = 25°C ID TC = 100°C IDM PD = 25°C PD = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS Continuous Drain Current, VGS Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Repetitive Avalanche Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter Junction-to-Case Junction-to-Ambient PCB Mounted,steady-state ** VDSS = 30V RDS on = D2Pak Max. 71 400 130 ± 20 390 60 13 -55 to + 175 300 1.6mm from case Typ. Max. 40 Units W/°C V mJ A mJ V/ns Units °C/W IRL2203S Electrical Characteristics TJ = 25°C unless otherwise specified Parameter V BR DSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS on VGS th gfs IDSS IGSS Qg Qgs Qgd td on tr td off tf LS Static Drain-to-Source On-Resistance |
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