IRFU4105ZTRL

IRFU4105ZTRL Datasheet

IRFR4105Z IRFU4105Z

Part	Datasheet
IRFU4105ZTRL	IRFU4105ZTRL (pdf)

Related Parts	Information
IRFU4105ZTRR	IRFU4105ZTRR
IRFR4105Z	IRFR4105Z
IRFU4105Z	IRFU4105Z
IRFR4105ZTR	IRFR4105ZTR
IRFR4105ZTRL	IRFR4105ZTRL
IRFR4105ZTRR	IRFR4105ZTRR
IRFU4105ZTR	IRFU4105ZTR

PDF Datasheet Preview
AUTOMOTIVE MOSFET ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax PD - 94752 IRFR4105Z IRFU4105Z Power MOSFET VDSS = 55V RDS on = ID = 30A Description Specifically designed for Automotive applications, this Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D-Pak IRFR4105Z I-Pak IRFU4105Z Absolute Maximum Ratings Parameter ID TC = 25°C Continuous Drain Current, VGS 10V Silicon Limited ID TC = 100°C Continuous Drain Current, VGS 10V Pulsed Drain Current PD = 25°C Power Dissipation Linear Derating Factor Gate-to-Source Voltage d EAS Thermally limited Single Pulse Avalanche Energy h EAS Tested Single Pulse Avalanche Energy Tested Value Ã IAR Avalanche Current g EAR Repetitive Avalanche Energy TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter i Junction-to-Case Junction-to-Ambient PCB mount Junction-to-Ambient Max. 30 21 120 48 ± 20 29 46 See Fig.12a, 12b, 15, 16 -55 to + 175

PDF Datasheet Preview

AUTOMOTIVE MOSFET
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax

PD - 94752

IRFR4105Z IRFU4105Z

Power MOSFET

VDSS = 55V

RDS on =

ID = 30A

Description Specifically designed for Automotive applications, this Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

D-Pak IRFR4105Z

I-Pak IRFU4105Z

Absolute Maximum Ratings

Parameter

ID TC = 25°C Continuous Drain Current, VGS 10V Silicon Limited
ID TC = 100°C Continuous Drain Current, VGS 10V

Pulsed Drain Current

PD = 25°C Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage
d EAS Thermally limited Single Pulse Avalanche Energy
h EAS Tested Single Pulse Avalanche Energy Tested Value
Ã IAR

Avalanche Current
g EAR

Repetitive Avalanche Energy

TJ TSTG

Operating Junction and Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter
i Junction-to-Case

Junction-to-Ambient PCB mount

Junction-to-Ambient

Max. 30 21 120 48 ± 20 29 46

See Fig.12a, 12b, 15, 16
-55 to + 175

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Datasheet ID: IRFU4105ZTRL 639048