IRFIB8N50KPBF
IRFIB8N50KPBF Datasheet
IRFIB8N50K
| Part | Datasheet |
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IRFIB8N50KPBF |
IRFIB8N50KPBF (pdf) |
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IRFIB8N50K |
IRFIB8N50K |
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| SMPS MOSFET PD - 94444 IRFIB8N50K Applications l Switch Mode Power Supply SMPS l UninterruptIble Power Supply l High Speed Power Switching VDSS 500V Power MOSFET RDS on typ. 6.7A Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current Absolute Maximum Ratings Parameter ID TC = 25°C Continuous Drain Current, VGS 10V c ID TC = 100°C Continuous Drain Current, VGS 10V Pulsed Drain Current PD = 25°C Power Dissipation VGS dv/dt Linear Derating Factor Gate-to-Source Voltage e Peak Diode Recovery dv/dt TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Avalanche Characteristics EAS IAR EAR d Parameter Single Pulse Avalanche Energy c Avalanche Current c Repetitive Avalanche Energy Thermal Resistance Parameter Junction-to-Case Junction-to-Ambient TO-220 FULL-PAK Max. 27 45 ±30 17 -55 to + 150 300 1.6mm from case Typ. Max. 290 |
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