IRFI9520N

IRFI9520N Datasheet

IRFI9520N

Part	Datasheet
IRFI9520N	IRFI9520N (pdf)

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l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. Absolute Maximum Ratings ID TC = 25°C ID TC = 100°C IDM PD = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS -10V Continuous Drain Current, VGS -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Repetitive Avalanche Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Junction-to-Case Junction-to-Ambient IRFI9520N Power MOSFET VDSS = -100V RDS on = ID = -5.5A TO-220 FULLPAK Max. -27 30 ± 20 140 -55 to + 175 300 1.6mm from case 10 lbf•in 1.1N•m Typ. Max. 65 Units W/°C V mJ A mJ V/ns Units °C/W 3/16/98 IRFI9520N Electrical Characteristics TJ = 25°C unless otherwise specified Parameter V BR DSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS on Static Drain-to-Source On-Resistance VGS th Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current

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l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l P-Channel
l Fully Avalanche Rated

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.

Absolute Maximum Ratings

ID TC = 25°C ID TC = 100°C IDM PD = 25°C

VGS EAS IAR EAR dv/dt TJ TSTG

Parameter Continuous Drain Current, VGS -10V Continuous Drain Current, VGS -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Repetitive Avalanche Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw

Thermal Resistance

Parameter

Junction-to-Case Junction-to-Ambient

IRFI9520N

Power MOSFET

VDSS = -100V RDS on =

ID = -5.5A

TO-220 FULLPAK

Max. -27 30 ± 20 140 -55 to + 175
300 1.6mm from case 10 lbf•in 1.1N•m

Typ.

Max. 65

Units

W/°C

V mJ A mJ V/ns

Units °C/W
3/16/98

IRFI9520N

Electrical Characteristics TJ = 25°C unless otherwise specified

Parameter

V BR DSS Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

RDS on

Static Drain-to-Source On-Resistance

VGS th

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

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Datasheet ID: IRFI9520N 639043