IRFBA22N50APBF

IRFBA22N50APBF Datasheet

IRFBA22N50A

Part	Datasheet
IRFBA22N50APBF	IRFBA22N50APBF (pdf)

PDF Datasheet Preview
PD-91886C SMPS MOSFET IRFBA22N50A Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching VDSS RDS on max 500V Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified See AN1001 Super-220 TO-273AA Absolute Maximum Ratings ID TC = 25°C ID TC = 100°C IDM PD = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Recommended clip force Max. 24 15 96 340 ± 30 -55 to + 150 300 1.6mm from case 20 Units W/°C V/ns Applicable Off Line SMPS Topologies l Full Bridge Converters l Power Factor Correction Boost Notes through are on page 8 8/15/02 IRFBA22N50A Static TJ = 25°C unless otherwise specified V BR DSS RDS on VGS th IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Min. 500 Typ. Max. 25 250 100 -100 Units V µA Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 13.8A - VDS = VGS, ID = 250µA VDS = 500V, VGS = 0V VDS = 400V, VGS = 0V, TJ = 125°C VGS = 30V VGS = -30V Dynamic TJ = 25°C unless otherwise specified Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge

PDF Datasheet Preview

PD-91886C

SMPS MOSFET

IRFBA22N50A

Power MOSFET

Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching

VDSS RDS on max
500V

Benefits l Low Gate Charge Qg results in Simple

Drive Requirement l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness l Fully Characterized Capacitance and

Avalanche Voltage and Current l Effective Coss Specified See AN1001

Super-220 TO-273AA

Absolute Maximum Ratings

ID TC = 25°C ID TC = 100°C IDM PD = 25°C

VGS dv/dt TJ TSTG

Parameter Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Recommended clip force

Max. 24 15 96 340 ± 30
-55 to + 150
300 1.6mm from case 20

Units

W/°C

V/ns

Applicable Off Line SMPS Topologies l Full Bridge Converters l Power Factor Correction Boost

Notes through are on page 8
8/15/02

IRFBA22N50A

Static TJ = 25°C unless otherwise specified

V BR DSS RDS on VGS th IDSS

IGSS

Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage

Drain-to-Source Leakage Current

Min. 500

Typ.

Max. 25 250 100 -100

Units V µA

Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 13.8A - VDS = VGS, ID = 250µA VDS = 500V, VGS = 0V VDS = 400V, VGS = 0V, TJ = 125°C VGS = 30V VGS = -30V

Dynamic TJ = 25°C unless otherwise specified

Parameter

Forward Transconductance

Total Gate Charge

Gate-to-Source Charge

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IRFBA22N50APBF Datasheet file may be downloaded here without warranties.

Datasheet ID: IRFBA22N50APBF 639042