BGA736L16E6327XTSA1

BGA736L16E6327XTSA1 Datasheet

BGA736L16

Part	Datasheet
BGA736L16E6327XTSA1	BGA736L16E6327XTSA1 (pdf)

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Data Sheet, V2.1, July 2008 BGA736L16 Tri-Band HSDPA LNA 2100, 1900/2100, 800/900 MHz RF & Protection Devices Edition 2008-07-03 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics “Beschaffenheitsgarantie” . With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA736L16 - Tri-Band HSDPA LNA Previous Version 2008-02-27, V2.0 Updated HBM ESD protection Added RF characteristics for UMTS band VIII Added RF characteristics for UMTS band IV Added application circuit schematic for UMTS bands I, IV and VIII Updated values for high and mid gain currents Data Sheet V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Table of Contents Table of Contents 4 Description 5 Electrical Characteristics 6 Absolute Maximum Ratings 6 Thermal Resistance 6 ESD Integrity 6 DC Characteristics 7 Band Select / Gain Control Truth Table 7 Supply current characteristics TA = 25 °C 8 Logic Signal Characteristics TA = 25 °C 9 Switching Times 9 Measured RF Characteristics Low Band 10 Measured RF Characteristics UMTS Band V 10 Measured RF Characteristics UMTS Band VIII 11 Measured RF Characteristics Mid Band 12 Measured RF Characteristics UMTS Band II 12 Measured RF Characteristics UMTS Band IV 13 Measured RF Characteristics High Band 14 Measured RF Characteristics UMTS Band I 14 Measured Performance Low Band High Gain Mode vs. Frequency 15 Measured Performance Low Band High Gain Mode vs. Temperature 16 Measured Performance Low Band Mid Gain Mode vs. Frequency 17 Measured Performance Low Band Mid Gain Mode vs. Temperature 19 Measured Performance Low Band Low Gain Mode vs. Frequency 20 Measured Performance Low Band Low Gain Mode vs. Temperature 21 Measured Performance Mid Band High Gain Mode vs. Frequency 22 Measured Performance Mid Band High Gain Mode vs. Temperature 24 Measured Performance Mid Band Mid Gain Mode vs. Frequency 25 Measured Performance Mid Band Mid Gain Mode vs. Temperature 26 Measured Performance Mid Band Low Gain Mode vs. Frequency 27 Measured Performance Mid Band Low Gain Mode vs. Temperature 29 Measured Performance High Band High Gain Mode vs. Frequency 30 Measured Performance High Band High Gain Mode vs. Temperature 31 Measured Performance High Band Mid Gain Mode vs. Frequency 32 Measured Performance High Band Mid Gain Mode vs. Temperature 34 Measured Performance High Band Low Gain Mode vs. Frequency 35 Measured Performance High Band Low Gain Mode vs. Temperature 36 Application Circuit and Block Diagram 38 UMTS bands I, II and V Application Circuit Schematic 38 UMTS bands I, IV and VIII Application Circuit Schematic 39 Pin Definition 40 Application Board 41 Physical Characteristics 43 Package Footprint 43 Package Dimensions 44 Data Sheet V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA The BGA736L16 is a highly flexible, tri-gain mode, and tri-band 2100, 1900/2100, 800/900 MHz MMIC low noise amplifier for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA736L16 features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection on-chip and matching off chip. While two gain modes are common in W-CDMA systems, a third gain mode has been introduced to reduce the LNA gain just enough to pass adjacent channel tests without compromising on HSDPA performance. The 1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing the input matching and using an additional external output matching network. This document specifies device performance for the band combinations - UMTS bands I / II / V and UMTS bands I / IV / VIII. Features • Gain 16 / 3 / -8 dB in high / mid / low gain mode • Noise figure dB in high gain mode • Supply current / / mA in high / mid / low gain modes • Standby mode current consumption < 2 µA • Outputs internally matched to 50 • 2 kV HBM ESD protection • Low external component count • Small leadless TSLP-16-1 package x mm • Pb-free RoHS compliant package TSLP-16-1 package 5 *1'+ 9&& 5 ,10 5 2870

PDF Datasheet Preview

Data Sheet, V2.1, July 2008

BGA736L16

Tri-Band HSDPA LNA 2100, 1900/2100, 800/900 MHz

RF & Protection Devices

Edition 2008-07-03

Published by Infineon Technologies AG 81726 München, Germany

Infineon Technologies AG All Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics “Beschaffenheitsgarantie” . With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

BGA736L16 - Tri-Band HSDPA LNA

Previous Version 2008-02-27, V2.0

Updated HBM ESD protection

Added RF characteristics for UMTS band VIII

Added RF characteristics for UMTS band IV

Added application circuit schematic for UMTS bands I, IV and VIII

Updated values for high and mid gain currents

Data Sheet

V2.1, 2008-07-03

BGA736L16 - Tri-Band HSDPA LNA

Table of Contents

Table of Contents 4

Description 5

Electrical Characteristics 6 Absolute Maximum Ratings 6 Thermal Resistance 6 ESD Integrity 6 DC Characteristics 7 Band Select / Gain Control Truth Table 7

Supply current characteristics TA = 25 °C 8 Logic Signal Characteristics TA = 25 °C 9

Switching Times 9 Measured RF Characteristics Low Band 10

Measured RF Characteristics UMTS Band V 10 Measured RF Characteristics UMTS Band VIII 11 Measured RF Characteristics Mid Band 12 Measured RF Characteristics UMTS Band II 12 Measured RF Characteristics UMTS Band IV 13 Measured RF Characteristics High Band 14 Measured RF Characteristics UMTS Band I 14 Measured Performance Low Band High Gain Mode vs. Frequency 15 Measured Performance Low Band High Gain Mode vs. Temperature 16 Measured Performance Low Band Mid Gain Mode vs. Frequency 17 Measured Performance Low Band Mid Gain Mode vs. Temperature 19 Measured Performance Low Band Low Gain Mode vs. Frequency 20 Measured Performance Low Band Low Gain Mode vs. Temperature 21 Measured Performance Mid Band High Gain Mode vs. Frequency 22 Measured Performance Mid Band High Gain Mode vs. Temperature 24 Measured Performance Mid Band Mid Gain Mode vs. Frequency 25 Measured Performance Mid Band Mid Gain Mode vs. Temperature 26 Measured Performance Mid Band Low Gain Mode vs. Frequency 27 Measured Performance Mid Band Low Gain Mode vs. Temperature 29 Measured Performance High Band High Gain Mode vs. Frequency 30 Measured Performance High Band High Gain Mode vs. Temperature 31 Measured Performance High Band Mid Gain Mode vs. Frequency 32 Measured Performance High Band Mid Gain Mode vs. Temperature 34 Measured Performance High Band Low Gain Mode vs. Frequency 35 Measured Performance High Band Low Gain Mode vs. Temperature 36

Application Circuit and Block Diagram 38 UMTS bands I, II and V Application Circuit Schematic 38 UMTS bands I, IV and VIII Application Circuit Schematic 39 Pin Definition 40 Application Board 41

Physical Characteristics 43 Package Footprint 43 Package Dimensions 44

Data Sheet

V2.1, 2008-07-03

BGA736L16 - Tri-Band HSDPA LNA

The BGA736L16 is a highly flexible, tri-gain mode, and tri-band 2100, 1900/2100, 800/900 MHz MMIC low noise amplifier for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA736L16 features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection on-chip and matching off chip. While two gain modes are common in W-CDMA systems, a third gain mode has been introduced to reduce the LNA gain just enough to pass adjacent channel tests without compromising on HSDPA performance. The 1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing the input matching and using an additional external output matching network. This document specifies device performance for the band combinations - UMTS bands I / II / V and UMTS bands I / IV / VIII.

Features
• Gain 16 / 3 / -8 dB in high / mid / low gain mode
• Noise figure dB in high gain mode
• Supply current / / mA in high / mid / low gain modes
• Standby mode current consumption < 2 µA
• Outputs internally matched to 50
• 2 kV HBM ESD protection
• Low external component count
• Small leadless TSLP-16-1 package x mm
• Pb-free RoHS compliant package

TSLP-16-1 package
5 *1'+ 9&&
5 ,10
5 2870

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BGA736L16E6327XTSA1 Datasheet file may be downloaded here without warranties.

Datasheet ID: BGA736L16E6327XTSA1 637704