IRF1405ZTRR

IRF1405ZTRR Datasheet

IRF1405Z

Part	Datasheet
IRF1405ZTRR	IRF1405ZTRR (pdf)

Related Parts	Information
IRF1405Z	IRF1405Z
IRF1405ZL	IRF1405ZL
IRF1405ZS	IRF1405ZS
IRF1405ZTRL	IRF1405ZTRL

PDF Datasheet Preview
PD - 94645A IRF1405Z AUTOMOTIVE MOSFET IRF1405ZS l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax IRF1405ZL Power MOSFET VDSS = 55V RDS on = Description Specifically designed for Automotive applications, this Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB IRF1405Z ID = 75A D2Pak IRF1405ZS TO-262 IRF1405ZL Absolute Maximum Ratings Parameter ID TC = 25°C Continuous Drain Current, VGS 10V Silicon Limited ID TC = 100°C Continuous Drain Current, VGS 10V ID TC = 25°C Continuous Drain Current, VGS 10V Package Limited Pulsed Drain Current PD = 25°C Power Dissipation Linear Derating Factor Gate-to-Source Voltage d EAS Thermally limited Single Pulse Avalanche Energy EAS Tested h Single Pulse Avalanche Energy Tested Value Ã Avalanche Current g Repetitive Avalanche Energy Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient

PDF Datasheet Preview

PD - 94645A

IRF1405Z

AUTOMOTIVE MOSFET

IRF1405ZS
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax

IRF1405ZL

Power MOSFET

VDSS = 55V

RDS on =

Description Specifically designed for Automotive applications, this Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

TO-220AB IRF1405Z

ID = 75A

D2Pak IRF1405ZS

TO-262 IRF1405ZL

Absolute Maximum Ratings

Parameter

ID TC = 25°C Continuous Drain Current, VGS 10V Silicon Limited

ID TC = 100°C Continuous Drain Current, VGS 10V

ID TC = 25°C Continuous Drain Current, VGS 10V Package Limited
Pulsed Drain Current

PD = 25°C Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage
d EAS Thermally limited Single Pulse Avalanche Energy

EAS Tested
h Single Pulse Avalanche Energy Tested Value
Ã Avalanche Current
g Repetitive Avalanche Energy

Operating Junction and

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

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Datasheet ID: IRF1405ZTRR 639029