IRCZ44PBF

IRCZ44PBF Datasheet

IRCZ44

Part	Datasheet
IRCZ44PBF	IRCZ44PBF (pdf)

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PD - 9.529B IRCZ44 Power MOSFET l Dynamic dv/dt Rating l Current Sense l 175°C Operating Temperature l Fast Switching l Ease of Paralleling l Simple Drive Requirements Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and cost-effectiveness. The HEXSense device provides an accurate fraction of the drain current through the additional two leads to be used for control or protection of the device. These devices exhibit similar electrical and thermal characteristics as their IRF-series equivalent part numbers. The provision of a kelvin source connection effectively eliminates problems of common source inductance when the HEXSence is used as a fast, high-current switch in non current-sensing applications. VDSS = 60V RDS on = ID = 50A TO-220 HexSense Absolute Maximum Ratings ID TC = 25°C ID TC = 100°C IDM PD = 25°C VGS EAS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Max. 50 37 210 150 ±20 30 -55 to + 175 300 1.6mm from case 10 lbf•in N•m Units W/°C V mJ V/ns Thermal Resistance Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Min. Typ. Max. 62 Units °C/W C-13 IRCZ44 Electrical Characteristics TJ = 25°C unless otherwise specified Parameter V BR DSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS ON VGS th gfs Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td on tr td off tf Min. Typ. Max. Units Conditions 60 V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 31A- V VDS = VGS, ID = 250µA

PDF Datasheet Preview

PD - 9.529B

IRCZ44

Power MOSFET
l Dynamic dv/dt Rating l Current Sense l 175°C Operating Temperature l Fast Switching l Ease of Paralleling l Simple Drive Requirements

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and cost-effectiveness.

The HEXSense device provides an accurate fraction of the drain current through the additional two leads to be used for control or protection of the device. These devices exhibit similar electrical and thermal characteristics as their IRF-series equivalent part numbers. The provision of a kelvin source connection effectively eliminates problems of common source inductance when the HEXSence is used as a fast, high-current switch in non current-sensing applications.

VDSS = 60V RDS on =

ID = 50*A

TO-220 HexSense

Absolute Maximum Ratings

ID TC = 25°C ID TC = 100°C IDM PD = 25°C

VGS EAS dv/dt TJ TSTG

Parameter Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw

Max. 50* 37 210 150 ±20 30 -55 to + 175
300 1.6mm from case 10 lbf•in N•m

Units

W/°C

V mJ V/ns

Thermal Resistance

Parameter

Junction-to-Case-to-Sink, Flat, Greased Surface Junction-to-Ambient

Min.

Typ.

Max. 62

Units °C/W

C-13

IRCZ44

Electrical Characteristics TJ = 25°C unless otherwise specified

Parameter

V BR DSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient

RDS ON VGS th gfs

Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg Qgs Qgd td on tr td off tf

Min. Typ. Max. Units

Conditions
60 V VGS = 0V, ID = 250µA

V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 31A-

V VDS = VGS, ID = 250µA

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Datasheet ID: IRCZ44PBF 639024