MS2176
MS2176 Datasheet
The MS2176 is a gold metallized silicon NPN pulse power transistor designed for applications requiring high peak power and low duty cycles within the frequency range of 400 500 MHz.
| Part | Datasheet |
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MS2176 |
MS2176 (pdf) |
| PDF Datasheet Preview |
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| 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE 215 631-9840 FAX 215 631-9855 RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS • 350 WATTS 10µSEC PULSE WIDTH, 10% DUTY CYCLE • 300 WATTS 250µSEC PULSE WIDTH 10% DUTY CYCLE • DB MIN. GAIN • REFRACTORY GOLD METALLIZATION • EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS • INFINITE VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS DESCRIPTION: The MS2176 is a gold metallized silicon NPN pulse power transistor designed for applications requiring high peak power and low duty cycles within the frequency range of 400 500 MHz. MS2176 ABSOLUTE MAXIMUM RATINGS Tcase = 25°C Parameter VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage Device Current PDISS Power Dissipation Junction Temperature TSTG Storage Temperature Thermal Data RTH j-c Junction-Case Thermal Resistance Value Unit +200 -65 to +150 °C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at or contact our factory direct. ELECTRICAL SPECIFICATIONS Tcase = 25°C STATIC Test Conditions BVCBO BVCES BVCEO BVEBO ICES IC = 50 mA IC = 50 mA IC = 50 mA IE = 10 mA VCE =30 V VCE = 5 V |
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