APTGF200U120DG
APTGF200U120DG Datasheet
APTGF200U120DG
| Part | Datasheet |
|---|---|
APTGF200U120DG |
APTGF200U120DG (pdf) |
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| APTGF200U120DG Single Switch with Series diodes NPT IGBT Power Module VCES = 1200V IC = 200A Tc = 80°C Application • Zero Current Switching resonant mode • Non Punch Through NPT FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Absolute maximum ratings Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 IC Continuous Collector Current Tc = 25°C Tc = 80°C ICM Pulsed Collector Current Tc = 25°C VGE Gate Emitter Voltage ±20 PD Maximum Power Dissipation Tc = 25°C 1136 Tj = 150°C 400A 1200V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTGF200U120DG All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit |
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