IRCZ24PBF

IRCZ24PBF Datasheet

IRCZ24

Part	Datasheet
IRCZ24PBF	IRCZ24PBF (pdf)

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PD - 9.615A IRCZ24 Power MOSFET l Dynamic dv/dt Rating l Current Sense l 175°C Operating Temperature l Fast Switching l Ease of Paralleling l Simple Drive Requirements Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and cost-effectiveness. The HEXSence device provides an accurate fraction of the drain current through the additional two leads to be used for control or protection of the device. These devices exhibit similar electrical and thermal characteristics as their IRF-series equivalent part numbers. The provision of a kelvin source connection effectively eliminates problems of common source inductance when the HEXSence is used as a fast, high-current switch in non current-sensing applications. VDSS = 55V RDS on = ID = 26A TO-220 HexSense Absolute Maximum Ratings ID TC = 25°C ID TC = 100°C IDM PD = 25°C VGS EAS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or screw Max. 17 12 68 60 ±20 -55 to + 175 300 1.6mm from case 10 lbf•in N•m Units W/°C V mJ A Thermal Resistance Parameter Min. Max. Units Junction-to-Case Case-to-Sink, Flat, Greased Surface °C/W Junction-to-Ambient ** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994. IRCZ24 Electrical Characteristics TJ = 25°C unless otherwise specified Parameter V BR DSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS ON Static Drain-to-Source On-Resistance VGS th Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current

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PD - 9.615A

IRCZ24

Power MOSFET
l Dynamic dv/dt Rating l Current Sense l 175°C Operating Temperature l Fast Switching l Ease of Paralleling l Simple Drive Requirements

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and cost-effectiveness.

The HEXSence device provides an accurate fraction of the drain current through the additional two leads to be used for control or protection of the device. These devices exhibit similar electrical and thermal characteristics as their IRF-series equivalent part numbers. The provision of a kelvin source connection effectively eliminates problems of common source inductance when the HEXSence is used as a fast, high-current switch in non current-sensing applications.

VDSS = 55V RDS on =

ID = 26A

TO-220 HexSense

Absolute Maximum Ratings

ID TC = 25°C ID TC = 100°C IDM PD = 25°C

VGS EAS dv/dt TJ TSTG

Parameter Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or screw

Max. 17 12 68 60 ±20
-55 to + 175
300 1.6mm from case 10 lbf•in N•m

Units

W/°C

V mJ A

Thermal Resistance

Parameter

Min.

Max.

Units

Junction-to-Case

Case-to-Sink, Flat, Greased Surface
°C/W

Junction-to-Ambient
** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994.

IRCZ24

Electrical Characteristics TJ = 25°C unless otherwise specified

Parameter

V BR DSS Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

RDS ON

Static Drain-to-Source On-Resistance

VGS th

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

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Datasheet ID: IRCZ24PBF 639022