H11D3

H11D3 Datasheet

The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

Part	Datasheet
H11D3	H11D3 (pdf)

Related Parts	Information
H11D23S	H11D23S
H11D4SD	H11D4SD
H11D4W	H11D4W
H11D3300W	H11D3300W
H11D4300	H11D4300
H11D4	H11D4
H11D3W	H11D3W
H11D3SD	H11D3SD
H11D13S	H11D13S
H11D13SD	H11D13SD
H11D3S	H11D3S
H11D1S	H11D1S
H11D4300W	H11D4300W
H11D33S	H11D33S
H11D1300W	H11D1300W
H11D3300	H11D3300
H11D1SD	H11D1SD
H11D2W	H11D2W
H11D2SD	H11D2SD
H11D1W	H11D1W
H11D23SD	H11D23SD
H11D2300W	H11D2300W
H11D4S	H11D4S
H11D2S	H11D2S
H11D33SD	H11D33SD
H11D43SD	H11D43SD
H11D43S	H11D43S
4N383SD	4N383SD
4N38W	4N38W
4N38300	4N38300
4N38300W	4N38300W
4N383S	4N383S
4N38S	4N38S
4N38SD	4N38SD
H11D1	H11D1
H11D2	H11D2
H11D1300	H11D1300
H11D2300	H11D2300
4N38	4N38

PDF Datasheet Preview
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. • High Voltage - H11D1, H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V • High isolation voltage - 5300 VAC RMS - 1 minute - 7500 VAC PEAK - 1 minute • Underwriters Laboratory UL recognized File# E90700 H11D1 H11D2 H11D3 H11D4 4N38 • Power supply regulators • Digital logic inputs • Microprocessor inputs • Appliance sensor systems • Industrial controls ANODE 1 CATHODE 2 N/C 3 ABSOLUTE MAXIMUM RATINGS Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation TA = 25°C Derate above 25°C EMITTER Forward DC Current Reverse Input Voltage Forward Current - Peak 1µs pulse, 300pps LED Power Dissipation TA = 25°C Derate above 25°C 6 BASE 5 COLLECTOR 4 EMITTER TSTG TOPR TSOL IF VR IF pk PD Value -55 to +150 -55 to +100 260 for 10 sec Units °C °C mW/°C V A mW/°C 8/9/00 200046A HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS ABSOLUTE MAXIMUM RATINGS Cont. Parameter DETECTOR Power Dissipation TA = 25°C Derate linearly above 25°C Collector to Emitter Voltage Collector Base Voltage Emitter to Collector Voltage Collector Current Continuous H11D1 - H11D2 H11D3 - H11D4 4N38 H11D1 - H11D2 H11D3 - H11D4 4N38 H11D1 - H11D2 H11D3 - H11D4 H11D1, H11D2, H11D3, H11D4, 4N38 Symbol PD VCER VCBO VECO Value 300 200 80 300 200 80 Units mW/°C ELECTRICAL CHARACTERISTICS TA = 25°C Unless otherwise specified. ORDERING INFORMATION H11D1, H11D2, H11D3, H11D4, 4N38 Option S SD W 300 300W 3S 3SD Order Entry Identifier .S .SD .W .300W .3S .3SD Surface Mount Lead Bend Surface Mount Tape and reel Lead Spacing VDE 0884 VDE 0884, Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape & Reel QT Carrier Tape Specifications “D” Taping Orientation ± ± ± ± ± ± ± ± ± User Direction of Feed NOTE All dimensions are in millimeters 8/9/00 200046A MARKING INFORMATION H11D1 2 V XX YY K 6 1 Fairchild logo 2 Device number VDE mark Note Only appears on parts ordered with VDE option See order entry table 4 Two digit year code, e.g., ‘03’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code Black Package, No Temperature °C 215°C, s 225 C peak 200 Time above 183°C, sec Ramp up = 3C/sec 0 1 2 3 4 Time Minute • Peak reflow temperature 225°C package surface temperature • Time of temperature higher than 183°C for seconds • One time soldering reflow is recommended TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR Power247 Stealth ActiveArray FASTr LittleFET

PDF Datasheet Preview

HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
• High Voltage - H11D1, H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V
• High isolation voltage - 5300 VAC RMS - 1 minute - 7500 VAC PEAK - 1 minute
• Underwriters Laboratory UL recognized File# E90700

H11D1 H11D2 H11D3 H11D4 4N38
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
• Appliance sensor systems
• Industrial controls

ANODE 1 CATHODE 2

N/C 3

ABSOLUTE MAXIMUM RATINGS

Parameter TOTAL DEVICE

Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation TA = 25°C

Derate above 25°C EMITTER *Forward DC Current *Reverse Input Voltage *Forward Current - Peak 1µs pulse, 300pps *LED Power Dissipation TA = 25°C

Derate above 25°C
6 BASE 5 COLLECTOR 4 EMITTER

TSTG TOPR TSOL

IF VR IF pk PD

Value
-55 to +150
-55 to +100 260 for 10 sec

Units
°C °C mW/°C

V A mW/°C
8/9/00 200046A

HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

ABSOLUTE MAXIMUM RATINGS Cont.

Parameter DETECTOR *Power Dissipation TA = 25°C

Derate linearly above 25°C
*Collector to Emitter Voltage
*Collector Base Voltage
*Emitter to Collector Voltage Collector Current Continuous

H11D1 - H11D2 H11D3 - H11D4
4N38 H11D1 - H11D2 H11D3 - H11D4
4N38 H11D1 - H11D2 H11D3 - H11D4

H11D1, H11D2, H11D3, H11D4, 4N38

Symbol PD

VCER VCBO VECO

Value
300 200 80 300 200 80

Units mW/°C

ELECTRICAL CHARACTERISTICS TA = 25°C Unless otherwise specified.
ORDERING INFORMATION

H11D1, H11D2, H11D3, H11D4, 4N38

Option

S SD W 300 300W 3S 3SD

Order Entry Identifier
.S .SD .W .300W .3S .3SD

Surface Mount Lead Bend Surface Mount Tape and reel Lead Spacing VDE 0884 VDE 0884, Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape & Reel

QT Carrier Tape Specifications “D” Taping Orientation
± ±
± ± ±
± ±
± ±

User Direction of Feed

NOTE All dimensions are in millimeters
8/9/00 200046A

MARKING INFORMATION

H11D1 2 V XX YY K 6
1 Fairchild logo
2 Device number

VDE mark Note Only appears on parts ordered with VDE option See order entry table
4 Two digit year code, e.g., ‘03’
5 Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code

Black Package, No

Temperature °C
215°C, s
225 C peak 200

Time above 183°C, sec

Ramp up = 3C/sec
0 1 2 3 4

Time Minute
• Peak reflow temperature 225°C package surface temperature
• Time of temperature higher than 183°C for seconds
• One time soldering reflow is recommended

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx

ISOPLANAR

Power247

Stealth

ActiveArray FASTr

LittleFET

More datasheets: 4N38W | 4N38300 | 4N38300W | 4N383S | 4N38S | 4N38SD | H11D1 | H11D2 | H11D1300 | H11D2300

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Datasheet ID: H11D3 633869