H11D33SD
H11D33SD Datasheet
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
| Part | Datasheet |
|---|---|
H11D33SD |
H11D33SD (pdf) |
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4N383SD |
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4N38300 |
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H11D1 |
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H11D2 |
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| PDF Datasheet Preview |
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| HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. • High Voltage - H11D1, H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V • High isolation voltage - 5300 VAC RMS - 1 minute - 7500 VAC PEAK - 1 minute • Underwriters Laboratory UL recognized File# E90700 H11D1 H11D2 H11D3 H11D4 4N38 • Power supply regulators • Digital logic inputs • Microprocessor inputs • Appliance sensor systems • Industrial controls ANODE 1 CATHODE 2 N/C 3 ABSOLUTE MAXIMUM RATINGS Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation TA = 25°C Derate above 25°C EMITTER *Forward DC Current *Reverse Input Voltage *Forward Current - Peak 1µs pulse, 300pps *LED Power Dissipation TA = 25°C Derate above 25°C 6 BASE 5 COLLECTOR 4 EMITTER TSTG TOPR TSOL IF VR IF pk PD Value -55 to +150 -55 to +100 260 for 10 sec Units °C °C mW/°C V A mW/°C 8/9/00 200046A HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS ABSOLUTE MAXIMUM RATINGS Cont. Parameter DETECTOR *Power Dissipation TA = 25°C Derate linearly above 25°C *Collector to Emitter Voltage *Collector Base Voltage *Emitter to Collector Voltage Collector Current Continuous H11D1 - H11D2 H11D3 - H11D4 4N38 H11D1 - H11D2 H11D3 - H11D4 4N38 H11D1 - H11D2 H11D3 - H11D4 H11D1, H11D2, H11D3, H11D4, 4N38 Symbol PD VCER VCBO VECO Value 300 200 80 300 200 80 Units mW/°C ELECTRICAL CHARACTERISTICS TA = 25°C Unless otherwise specified. ORDERING INFORMATION H11D1, H11D2, H11D3, H11D4, 4N38 Option S SD W 300 300W 3S 3SD Order Entry Identifier .S .SD .W .300W .3S .3SD Surface Mount Lead Bend Surface Mount Tape and reel Lead Spacing VDE 0884 VDE 0884, Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape & Reel QT Carrier Tape Specifications “D” Taping Orientation ± ± ± ± ± ± ± ± ± User Direction of Feed NOTE All dimensions are in millimeters 8/9/00 200046A MARKING INFORMATION H11D1 2 V XX YY K 6 1 Fairchild logo 2 Device number VDE mark Note Only appears on parts ordered with VDE option See order entry table 4 Two digit year code, e.g., ‘03’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code Black Package, No Temperature °C 215°C, s 225 C peak 200 Time above 183°C, sec Ramp up = 3C/sec 0 1 2 3 4 Time Minute • Peak reflow temperature 225°C package surface temperature • Time of temperature higher than 183°C for seconds • One time soldering reflow is recommended TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR Power247 Stealth ActiveArray FASTr LittleFET |
| More datasheets: H11D1300W | H11D3300 | H11D1SD | H11D2W | H11D2SD | H11D1W | H11D23SD | H11D2300W | H11D4S | H11D2S |
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