GA400TD25S

GA400TD25S Datasheet

GA400TD25S

Part	Datasheet
GA400TD25S	GA400TD25S (pdf)

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"HALF-BRIDGE" IGBT DUAL INT-A-PAK • Generation 4 IGBT technology • Standard Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses • HEXFRED antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion UPS, SMPS, Welding • Lower EMI, requires less snubbing PD -50051D GA400TD25S Standard Speed IGBT VCES = 250V VCE on typ. = 1.3V = 15V, IC = 400A Absolute Maximum Ratings VCES IC TC = 25°C ICM ILM IFM VGE VISOL PD TC = 25°C PD TC = 85°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector CurrentQ Peak Switching CurrentR Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 250 400 800 ±20 2500 1350 700 -40 to +150 -40 to +125 Units V A V W °C Thermal / Mechanical Characteristics Parameter Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink S Mounting Torque, Case-to-Terminal 1, 2 & 3S Weight of Module Typ. 400 Max. Units °C/W N.m 05/15/02 GA400TD25S Electrical Characteristics TJ = 25°C unless otherwise specified Parameter Min. Typ. Max. Units Conditions V BR CES Collector-to-Emitter Breakdown Voltage 250 VGE = 0V, IC = 1mA VCE on Collector-to-Emitter Voltage VGE = 15V, IC = 400A V VGE = 15V, IC = 400A, TJ = 125°C VGE th Gate Threshold Voltage IC = 3.0mA Temperature Coeff. of Threshold Voltage -11 mV/°C VCE = VGE, IC = 2.5mA Forward TransconductanceT 371 S VCE = 25V, IC = 400A ICES

PDF Datasheet Preview

"HALF-BRIDGE" IGBT DUAL INT-A-PAK
• Generation 4 IGBT technology
• Standard Optimized for minimum saturation
voltage and operating frequencies up to 10kHz
• Very low conduction and switching losses
• HEXFRED antiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion UPS,

SMPS, Welding
• Lower EMI, requires less snubbing

PD -50051D

GA400TD25S

Standard Speed IGBT

VCES = 250V VCE on typ. = 1.3V = 15V, IC = 400A

Absolute Maximum Ratings

VCES IC TC = 25°C ICM ILM IFM VGE VISOL PD TC = 25°C PD TC = 85°C TJ TSTG

Parameter Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector CurrentQ Peak Switching CurrentR Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range

Max. 250 400 800 ±20 2500 1350 700 -40 to +150 -40 to +125

Units V A

V W °C

Thermal / Mechanical Characteristics

Parameter Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink S Mounting Torque, Case-to-Terminal 1, 2 & 3S Weight of Module

Typ. 400

Max.

Units
°C/W N.m
05/15/02

GA400TD25S

Electrical Characteristics TJ = 25°C unless otherwise specified

Parameter

Min. Typ. Max. Units

Conditions

V BR CES Collector-to-Emitter Breakdown Voltage 250

VGE = 0V, IC = 1mA

VCE on

Collector-to-Emitter Voltage

VGE = 15V, IC = 400A

V VGE = 15V, IC = 400A, TJ = 125°C

VGE th

Gate Threshold Voltage

IC = 3.0mA

Temperature Coeff. of Threshold Voltage -11 mV/°C VCE = VGE, IC = 2.5mA

Forward TransconductanceT
371 S VCE = 25V, IC = 400A

ICES

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Datasheet ID: GA400TD25S 639002