TDA21106

TDA21106 Datasheet

TDA21106

Part	Datasheet
TDA21106	TDA21106 (pdf)

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CoreControl TM Data Sheet High speed Driver with bootstrapping for dual Power MOSFETs TDA21106 P-DSO-8 • Fast rise and fall times for frequencies up to 2 MHz • Capable of sinking more than 4A peak currents for lowest switching losses • Charges High Side MOSFET gate drive voltage from 6 to 12V according to PVCC setting Low Side MOSFET at 12 V. • Adjustable High Side MOSFET gate drive voltage via PVCC pin for optimizing ON losses and gate drive losses • Integrates the bootstrap diode for reducing the part count • Prevents from cross-conducting by adaptive gate drive control • High voltage rating on Phase node • Supports shut-down mode for very low quiescent current through three-state input • Compatible to standard PWM controller ICs Intersil, Analog Devices • Floating High Side MOSFET drive • Footprint compatible to TDA21101G and HIP6601B • Ideal for multi-phase Desktop CPU supplies on motherboards and Type TDA21106 Package P-DSO-8 Marking 21106 Ordering Code Q67042-S4223 Pinout Top View GATEHS 1 BOOT 2 PWM 3 GND 4 8 PHASE 7 PVCC 6 VCC 5 GATELS Number Name GATEHS BOOT GATELS PVCC PHASE Gate drive output for the N-Channel High side MOSFET Floating bootstrap pin. To be connected to the external bootstrap capacitor to generate the gate drive voltage for the high side N-Channel MOSFET Input for the PWM controller signal Ground Gate drive output for the N-Channel Low Side MOSFET Supply voltage Input to adjust the High Side gate drive To be connected to the junction of the High Side and the Low Side MOSFET Apr, 2004 CoreControl TM Data Sheet TDA21106 The dual high speed driver is designed to drive a wide range of N-Channel low side and N-Channel high side MOSFETs with varying gate charges. It has a small propagation delay from input to output, short rise and fall times and the same pin configuration to be compatible to TDA21101G and HIP6601B. In addition it provides protection features as well as a three-state mode for efficiency reasons. The high breakdown voltage makes it suitable for mobile applications. Target application The dual high speed driver is designed to work well in half-bridge type circuits where dual N-Channel MOSFETs are utilized. A circuit designer can fully take advantage of the capabilities in high-efficiency, high-density synchronous DC/DC converters that operate at high switching frequencies, e.g. in multi-phase converters for CPU supplies on motherboards and but also in motor drive and class-D amplifier type applications. Absolute Maximum Ratings At Tj = 25 °C, unless otherwise specified Parameter Voltage supplied to ‘VCC’ pin DC Voltage supplied to ‘PVCC’ pin DC Voltage supplied to ‘PWM’ pin Voltage supplied to ‘BOOT’ pin referenced to ‘PHASE’ Voltage supplied to ‘BOOT’ pin referenced to ‘GND’ Voltage rating at ‘PHASE’ pin, DC Voltage rating at ‘PHASE’ pin, tpulse_max = 500ns Max Duty Cycle = 2% Voltage supplied to GATEHS pin referenced to ‘PHASE’ Tpulse_max < 100ns, Energy < 2uJ Voltage supplied to GATELS pin referenced to ‘GND’ Tpulse_max < 100ns, Energy < 2uJ Junction temperature Storage temperature ESD Rating Human Body Model IEC climatic category DIN EN 60068-1 VVCC VPVCC VPWM VBOOT VPHASE VBOOT VPHASE Value Min. Max. 25 5,5 -0,3 25 -0,3 45 -1 25 -20 30 Unit V VGATEHS VBOOT VGATELS -5 VVCC -25 150 °C -55 150 55/150/56 - Apr, 2004 CoreControl TM Data Sheet TDA21106 Thermal Characteristic Parameter Thermal resistance, junction-soldering point Thermal resistance, junction-ambient

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CoreControl TM

Data Sheet

High speed Driver with bootstrapping for dual Power MOSFETs

TDA21106

P-DSO-8
• Fast rise and fall times for frequencies up to 2 MHz
• Capable of sinking more than 4A peak currents for lowest switching losses
• Charges High Side MOSFET gate drive voltage from 6 to 12V according to PVCC
setting Low Side MOSFET at 12 V.
• Adjustable High Side MOSFET gate drive voltage via PVCC pin for optimizing ON
losses and gate drive losses
• Integrates the bootstrap diode for reducing the part count
• Prevents from cross-conducting by adaptive gate drive control
• High voltage rating on Phase node
• Supports shut-down mode for very low quiescent current through three-state input
• Compatible to standard PWM controller ICs Intersil, Analog Devices
• Floating High Side MOSFET drive
• Footprint compatible to TDA21101G and HIP6601B
• Ideal for multi-phase Desktop CPU supplies on motherboards and

Type TDA21106

Package P-DSO-8

Marking 21106
Ordering Code Q67042-S4223

Pinout Top View

GATEHS 1 BOOT 2 PWM 3 GND 4
8 PHASE 7 PVCC 6 VCC 5 GATELS

Number Name

GATEHS

BOOT

GATELS

PVCC

PHASE

Gate drive output for the N-Channel High side MOSFET Floating bootstrap pin. To be connected to the external bootstrap capacitor to generate the gate drive voltage for the high side N-Channel MOSFET Input for the PWM controller signal Ground Gate drive output for the N-Channel Low Side MOSFET Supply voltage Input to adjust the High Side gate drive To be connected to the junction of the High Side and the Low Side MOSFET

Apr, 2004

CoreControl TM

Data Sheet

TDA21106

The dual high speed driver is designed to drive a wide range of N-Channel low side and N-Channel high side MOSFETs with varying gate charges. It has a small propagation delay from input to output, short rise and fall times and the same pin configuration to be compatible to TDA21101G and HIP6601B. In addition it provides protection features as well as a three-state mode for efficiency reasons. The high breakdown voltage makes it suitable for mobile applications.

Target application

The dual high speed driver is designed to work well in half-bridge type circuits where dual N-Channel MOSFETs are utilized. A circuit designer can fully take advantage of the capabilities in high-efficiency, high-density synchronous DC/DC converters that operate at high switching frequencies, e.g. in multi-phase converters for CPU supplies on motherboards and but also in motor drive and class-D amplifier type applications.

Absolute Maximum Ratings

At Tj = 25 °C, unless otherwise specified

Parameter

Voltage supplied to ‘VCC’ pin DC Voltage supplied to ‘PVCC’ pin DC Voltage supplied to ‘PWM’ pin Voltage supplied to ‘BOOT’ pin referenced to ‘PHASE’

Voltage supplied to ‘BOOT’ pin referenced to ‘GND’ Voltage rating at ‘PHASE’ pin, DC Voltage rating at ‘PHASE’ pin, tpulse_max = 500ns Max Duty Cycle = 2% Voltage supplied to GATEHS pin referenced to ‘PHASE’ Tpulse_max < 100ns, Energy < 2uJ Voltage supplied to GATELS pin referenced to ‘GND’ Tpulse_max < 100ns, Energy < 2uJ Junction temperature Storage temperature ESD Rating Human Body Model IEC climatic category DIN EN 60068-1

VVCC VPVCC VPWM VBOOT VPHASE VBOOT VPHASE

Value Min. Max.
25 5,5 -0,3 25
-0,3 45 -1 25 -20 30

Unit V

VGATEHS VBOOT

VGATELS -5

VVCC
-25 150 °C
-55 150
55/150/56 -

Apr, 2004

CoreControl TM

Data Sheet

TDA21106

Thermal Characteristic

Parameter

Thermal resistance, junction-soldering point Thermal resistance, junction-ambient

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Datasheet ID: TDA21106 638695