GA200SA60S

GA200SA60S Datasheet

GA200SA60S

Part	Datasheet
GA200SA60S	GA200SA60S (pdf)

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PD- 50070A INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT • Standard Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC • Very low internal inductance 5 nH typ. • Industry standard outline n-channel VCES = 600V VCE on typ. = 1.10V = 15V, IC = 100A • Designed for increased operating efficiency in power conversion UPS, SMPS, Welding, Induction heating • Easy to assemble and parallel • Direct mounting to heatsink • Plug-in compatible with other SOT-227 packages Absolute Maximum Ratings VCES IC TC = 25°C IC TC = 100°C ICM ILM VGE EARV VISOL PD TC = 25°C PD TC = 100°C TJ TSTG S O T -2 7 Max. 600 200 100 400 ± 20 155 2500 630 250 -55 to + 150 -55 to + 150 12 lbf •in 1.3N•m Thermal Resistance Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Weight of Module Typ. 30 Max. Units V A V mJ V W °C Units °C/W gm 4/24/2000 GA200SA60S Electrical Characteristics TJ = 25°C unless otherwise specified Parameter Min. Typ. Max. Units Conditions V BR CES Collector-to-Emitter Breakdown Voltage 600 V BR ECS Emitter-to-Collector Breakdown Voltage T 18 Temperature Coeff. of Breakdown Voltage V/°C VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0A VGE = 0V, IC = 1.0mA IC = 100A VGE = 15V VCE ON Collector-to-Emitter Saturation Voltage VGE th Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance U ICES Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current

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PD- 50070A

INSULATED GATE BIPOLAR TRANSISTOR

Standard Speed IGBT
• Standard Optimized for minimum saturation voltage and low operating frequencies up to 1kHz
• Lowest conduction losses available
• Fully isolated package 2,500 volt AC
• Very low internal inductance 5 nH typ.
• Industry standard outline
n-channel

VCES = 600V VCE on typ. = 1.10V
= 15V, IC = 100A
• Designed for increased operating efficiency in power conversion UPS, SMPS, Welding, Induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages

Absolute Maximum Ratings

VCES IC TC = 25°C IC TC = 100°C ICM ILM VGE EARV VISOL PD TC = 25°C PD TC = 100°C TJ TSTG

S O T -2 7

Max. 600 200 100 400 ± 20 155 2500 630 250 -55 to + 150 -55 to + 150 12 lbf
•in 1.3N•m

Thermal Resistance

Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Weight of Module

Typ. 30

Max.

Units V A

V mJ V W °C

Units °C/W gm
4/24/2000

GA200SA60S

Electrical Characteristics TJ = 25°C unless otherwise specified

Parameter

Min. Typ. Max. Units

Conditions

V BR CES Collector-to-Emitter Breakdown Voltage 600 V BR ECS Emitter-to-Collector Breakdown Voltage T 18 Temperature Coeff. of Breakdown Voltage

V/°C

VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0A VGE = 0V, IC = 1.0mA IC = 100A

VGE = 15V

VCE ON

Collector-to-Emitter Saturation Voltage

VGE th

Gate Threshold Voltage

Temperature Coeff. of Threshold Voltage

Forward Transconductance U

ICES

Zero Gate Voltage Collector Current

IGES

Gate-to-Emitter Leakage Current

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Datasheet ID: GA200SA60S 639000