U1897
U1897 Datasheet
U1897 N-Channel JFET Switch
| Part | Datasheet |
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U1897 |
U1897 (pdf) |
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| U1897 N-Channel JFET Switch April 2008 U1897 N-Channel JFET Switch • This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. • Sourced from Process • See J111 for characteristics. TO-92 Drain Source Gate Absolute Maximum Ratings * Ta=25°C unless otherwise noted VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Value 40 -40 50 -55 ~ 150 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150°C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* Ta=25°C unless otherwise noted Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient * Device mounted on FR-4 PCB x Value 625 125 357 Units V mA °C Units mW/°C °C/W °C/W 2007 Fairchild Semiconductor Corporation U1897 N-Channel JFET Switch Electrical Characteristics * TC = 25°C unless otherwise noted Off Characteristics Parameter Conditions V BR GS Gate-Source Breakdown Voltage VGS off Gate-Source Cutoff Voltage IDGO Drain-Gate Leakage Current On Characteristics IG = uA, VDS = 0 VDS = 20 V, ID = nA VDG = 20 V, IS = 0 |
| More datasheets: MIKROE-2014 | 68648-006 | 68648-028 | 68648-030 | 68648-008 | 68648-003 | 68648-010 | 68648-011 | 68648-002 | 68648-023 |
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