SGR20N40LTF
SGR20N40LTF Datasheet
SGR20N40L / SGU20N40L
| Part | Datasheet |
|---|---|
SGR20N40LTF |
SGR20N40LTF (pdf) |
| Related Parts | Information |
|---|---|
SGU20N40LTU |
SGU20N40LTU |
|
SGR20N40LTM |
SGR20N40LTM |
| PDF Datasheet Preview |
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| SGR20N40L / SGU20N40L SGR20N40L / SGU20N40L August 2001 IGBT Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applications • High input impedance • High peak current capability 150A • Easy gate drive • Surface Mount SGR20N40L • Straight Lead SGU20N40L Application Strobe flash. G E D-PAK G C E I-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted VCES VGES ICM 1 PC TJ Tstg Description Collector - Emitter Voltage Gate - Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering purposes, 1/8” from case for 5 seconds TC = 25°C Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics D-PAK I-PAK Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient PCB Mount 2 Thermal Resistance, Junction-to-Ambient Notes 2 Mounted on 1” square PCB FR4 or G-10 Material SGR / SGU20N40L 400 ±6 150 45 -40 to +150 -40 to +150 Typ. ---- Max. 50 110 Units V A W °C °C °C Units °C/W °C/W °C/W 2001 Fairchild Semiconductor Corporation SGR20N40L / SGU20N40L Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics VGE th VCE sat G-E Threshold Voltage C-E Saturation Current Dynamic Characteristics Cies Coes Cres Switching Characteristics td on tr td off tf |
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