SGS23N60UFDTU

SGS23N60UFDTU Datasheet

SGS23N60UFD

Part	Datasheet
SGS23N60UFDTU	SGS23N60UFDTU (pdf)

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SGS23N60UFD SGS23N60UFD Ultra-Fast IGBT April 2001 IGBT Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. • High speed switching • Low saturation voltage VCE sat = V IC = 12A • High input impedance • CO-PAK, IGBT with FRD trr = 42ns typ. Application AC & DC Motor controls, general purpose inverters, robotics, servo controls TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES ICM 1 IF IFM PD TJ Tstg Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering purposes, 1/8” from case for 5 seconds TC = 25°C TC = 100°C TC = 100°C TC = 25°C TC = 100°C Notes 1 Repetitive rating Pulse width limited by max. junction temperature SGS23N60UFD 600 ± 20 23 12 92 12 92 73 29 -55 to +150 -55 to +150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---- Max. Units V A W °C °C °C Units °C/W °C/W °C/W 2001 Fairchild Semiconductor Corporation SGS23N60UFD Electrical Characteristics of IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-off Current G-E Leakage Current On Characteristics VGE th VCE sat G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Switching Characteristics

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SGS23N60UFD

SGS23N60UFD

Ultra-Fast IGBT

April 2001

IGBT

Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
• High speed switching
• Low saturation voltage VCE sat = V IC = 12A
• High input impedance
• CO-PAK, IGBT with FRD trr = 42ns typ.

Application

AC & DC Motor controls, general purpose inverters, robotics, servo controls

TO-220F

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VCES VGES

ICM 1 IF IFM PD

TJ Tstg

Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering purposes, 1/8” from case for 5 seconds

TC = 25°C TC = 100°C

TC = 100°C

TC = 25°C TC = 100°C

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

SGS23N60UFD 600 ± 20 23 12 92 12 92 73 29
-55 to +150 -55 to +150

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

Typ. ----

Max.

Units V A W °C °C °C

Units °C/W °C/W °C/W
2001 Fairchild Semiconductor Corporation

SGS23N60UFD

Electrical Characteristics of IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVCES ICES IGES

Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-off Current G-E Leakage Current

On Characteristics

VGE th VCE sat

G-E Threshold Voltage Collector to Emitter Saturation Voltage

Dynamic Characteristics

Cies Coes Cres

Switching Characteristics

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Datasheet ID: SGS23N60UFDTU 634764