SGU15N40LTU
SGU15N40LTU Datasheet
SGR15N40L / SGU15N40L
| Part | Datasheet |
|---|---|
SGU15N40LTU |
SGU15N40LTU (pdf) |
| Related Parts | Information |
|---|---|
SGR15N40LTF |
SGR15N40LTF |
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SGR15N40LTM |
SGR15N40LTM |
| PDF Datasheet Preview |
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| SGR15N40L / SGU15N40L SGR15N40L / SGU15N40L IGBT Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applications • High input impedance • High peak current capability 130A • Easy gate drive Application Strobe flash. G E D-PAK G C E I-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted VCES VGES ICM 1 PC TJ Tstg Description Collector - Emitter Voltage Gate - Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering purposes, 1/8” from case for 5 seconds TC = 25°C Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics D-PAK I-PAK Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient PCB Mount 2 Thermal Resistance, Junction-to-Ambient Notes 2 Mounted on 1” square PCB FR4 or G-10 Material SGR / SGU15N40L 400 ±6 130 45 -40 to +150 -40 to +150 Typ. ---- Max. 50 110 Units V A W °C °C °C Units °C/W °C/W °C/W 2002 Fairchild Semiconductor Corporation SGR15N40L / SGU15N40L Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector - Emitter Breakdown Voltage Collector Cut-Off Current G - E Leakage Voltage VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th VCE sat G - E Threshold Voltage C - E Saturation Current IC = 1mA, VCE = VGE IC = 130A, VGE = 4.5V Dynamic Characteristics Cies Coes Cres VGE = 0V, VCE = 30V, f = 1MHz |
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