SGP15N60RUFTU

SGP15N60RUFTU Datasheet


SGP15N60RUF

Part Datasheet
SGP15N60RUFTU SGP15N60RUFTU SGP15N60RUFTU (pdf)
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SGP15N60RUF

SGP15N60RUF

Short Circuit Rated IGBT

September 2000

IGBT

Fairchild's Insulated Gate Bipolar Transistor IGBT RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is required.
• Short Circuit rated 10us TC = 100°C, VGE = 15V
• High Speed Switching
• Low Saturation Voltage VCE sat = V IC = 15A
• High Input Impedance

Application

AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls

TO-220

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VCES VGES

ICM 1 TSC PD

TJ Tstg

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current Collector Current Pulsed Collector Current

TC = 25°C TC = 100°C

Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 100°C TC = 25°C TC = 100°C

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

SGP15N60RUF 600 ± 20 24 15 45 10 160 64
-55 to +150 -55 to +150

Typ. ---

Max.

Units V A us W °C °C °C

Units °C/W °C/W
2000 Fairchild Semiconductor International

SGP15N60RUF

Electrical Characteristics of IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVCES ICES IGES

Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current

On Characteristics
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Datasheet ID: SGP15N60RUFTU 634755